...Power MOSFET High Efficiency High Performance for Heavy Duty Applications Product Description: The IRF9530NPBF is a N-channel MOSFET, designed for use in high voltage switching applications, including DC-DC ...
...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n...
...0V • Operating Temperature Range: -55°C to +175°C • Mounting Type: Through Hole • Transistor Type: MOSFET N-Channel • Power Dissipation: 75W • Voltage - Supply: - • Gate Charge: 75nC • FET Feature: Standard ...
...MOSFET Power Electronics This International Rectifier IPD053N06NATMA1 is a N-channel Power MOSFET with a maximum drain source voltage of 30 V and a drain current of 53 A. It features an RDS(on) of 0.045 Ω, a...
...Power MOSFET for Power Electronics Applications IRFB3306PBF Power MOSFET Parameters: VDS - 100V ID - 30A RDS(on) - 0.0088 ohm Manufacturer: International Rectifier Package Type: TO-220 Maximum Gate Threshold...
...power MOSFET with low gate charge and fast switching capabilities 2. Low on-resistance and low input capacitance 3. Low gate input resistance and low gate-source capacitance 4. Low total gate charge and low ...
FDS6670A 8-SOIC Power MOSFET for High-Temperature High-Performance Power Electronics Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 13A (...
FDS86267P High Performance N-Channel Enhancement Mode Power MOSFET for Power Electronics Applications 8-SOIC 150V Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain ...
FDMQ86260 Power MOSFET N-Channel Enhancement Mode TO-263 Package Industrial Applications Power Electronics FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Conti...
FDBL0150N60 Power MOSFET Electronics for High-Speed Switching and Efficient Power Conversion FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id...
IRFM120ATF Power MOSFET Ideal for High Performance High Efficiency Power Electronics Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 2.3A...
Power MOSFET NTMFS4C025NT1G for High-Performance Switching and Power Conversion Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id...
FDS3692 N-Channel Power MOSFET for High Frequency High Efficiency Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drai...
FDD86102LZ High Power MOSFET Power Electronics Industrial Applications and High-Voltage Automotive Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - ...
FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C ...
Power MOSFET FDB024N08BL7 for High-Efficiency Power Electronics Applications Single N-Channel PQFN8 120 V 4.0 m 114 A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Curre...
FDM6675BZ High Frequency High Power MOSFET Power Electronics with Advanced Thermal Management FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (I...
... Capacitance (Ciss) @ Vds: 1550pF • Power - Max: 75W • Operating Temperature Range: -55°C to 175°C • Mounting Type: Surface Mount • Package / Case: TO-220-3 Full Pack • Supplier Device Package: TO-220AB • Te...
IRF3205ZSTRLPBF MOSFET Power Electronics Product Description: The IRF3205ZSTRLPBF is a high-performance, low-voltage, low-power MOSFET power electronics device from International Rectifier. This device features...
Product Description: 1. 100V N-Channel Power MOSFET 2. Logic Level Gate Drive 3. RDS(on) = 0.16 4. 70A, 7.3m drain source on-resistance 5. Optimized gate charge for high efficiency 6. 175C Operating temperat...
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