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...Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses ...
...Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectificat...
...Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable for use in PWM, load switching and general pur...
FCB36N60NTM MOSFET Transistors Discrete Semiconductors original Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package/Case: SC-70-3 Transistor Polarity: N-Cha...
...Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 t...
FDMA3023PZ mosfet transistors original new electronic components small signal discrete semiconductors Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: MicroFET-6 Transistor Polari...
...Transistor/LED/Capacitor Radial Lead 90 Degree Bending Machine Intro: RS-901K is motorized radial lead forming machine, it can work for various components, transistors, LED, capacitors and etc. Cutting and f...
... Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl PRODUCT PROPERTIES Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Pac...
...Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET MOSFT 20V 6.3A 21mOhm 2.5V cpbl PRODUCT PROPERTIES Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Packa...
... Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A R...
... Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 3.7 A R...
...Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET SC70-6 COMP N-P-CH PRODUCT PROPERTIES Manufacturer: onsemi Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case...
... Diode Transistor Chips IC PRODUCT DESCRIPTION MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified PRODUCT PROPERTIES Manufacturer: Vishay Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package...
...Transistor Chip Circuit Protection 75V 170A Description Power MOSFT 75V 170A 4.1mOhm Single N-Channel HEXFET Power MOSFET in a D2-Pak package Specifications Product Attribute Attribute Value Manufacturer: In...
...Transistor Chip Circuit protection IRF8736TRPBF 30V 18A Product range MOSFET MOSFT 30V 18A 4.8mOhm 17nC Basic data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Deta...
...Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses ...
...Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectificat...
...Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable for use in PWM, load switching and general pur...
FCB36N60NTM MOSFET Transistors Discrete Semiconductors original Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package/Case: SC-70-3 Transistor Polarity: N-Cha...
...Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 t...