| Sign In | Join Free | My burrillandco.com |
|
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...
QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the s...
60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5m RDS(ON) (at VGS=4.5V) < 18m General Description Low RDS(ON) Logic Level Gate Drive Excellent Gate ...
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m RDS(ON) (at VGS = 4.5V) < 30m RDS(ON) (at VGS = 2.5V) < 48m General Description The HXY4404 uses advance...
18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...
AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent...
Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-packag...
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...
20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS...
QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the s...
AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent...
60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5m RDS(ON) (at VGS=4.5V) < 18m General Description Low RDS(ON) Logic Level Gate Drive Excellent Gate ...
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m RDS(ON) (at VGS = 4.5V) < 30m RDS(ON) (at VGS = 2.5V) < 48m General Description The HXY4404 uses advance...
18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...
Product Detail Packaging Tube Part Status Active Triac Type Logic - Sensitive Gate Voltage - Off State 600V Current - On State (It (RMS)) (Max) 4A Voltage - Gate Trigger (Vgt) (Max) 1.5V Current - Non Rep. Surg...
Product Detail Packaging Tube Part Status Active Triac Type Logic - Sensitive Gate Voltage - Off State 600V Current - On State (It (RMS)) (Max) 4A Voltage - Gate Trigger (Vgt) (Max) 1.5V Current - Non Rep. Surg...
ON Semiconductor IC MMBT3904LT1G TRANS NPN 40V 0.2A SOT23-3 Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N...
Fuji N-Channel FMH23N50E Silicon Power Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss ...