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...Power Electronics 8-PowerTDFN N-Channel Transistor Switching Low Voltage Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ ...
...Power Electronics 60 V 9.3 m 50 A Single N−Channel N-Channel PowerTrench P-Channel QFET® MOSFET -60 V, -12 A, 135 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Curren...
...Power Electronics Discrete Semiconductor Transistors N-Channel 30V 3W Surface Mount Package 8-SOIC ET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous D...
...Power Electronics Transistors N-Channel 20V 20A Surface Mount Package 8-SOIC FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 20A ...
...Power Electronics High Voltage Low RDS on 55V 100A N Channel FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Volta...
... 4.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8410 pF @...
...Power Electronics High Performance Automotive Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 16A (Ta), 100A (Tc) Dr...
..., Vgs 85mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 4 V Vgs (Max) ±8V Input Capacitance (Ciss)...
... 4mOhm @ 67A, 10V Vgs(th) (Max) @ Id 4V @ 370A Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max)...
Product Listing: IRFL024NTRPBF – N-Channel Enhancement Mode Power MOSFET Features: • Low On-Resistance RDS(on) = 0.0095 ohm • Low Gate Charge Qg = 6.2 nC • High Drain Current Capability ID = 2.4A • Low Input Ca...
... 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 411 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss)...
...Rectifier MOSFET Power Electronics Product Parameters: • Technology: MOSFET • Package Type: PowerPAK® SO-8 • Maximum Continuous Drain Current: 24A • Maximum Drain Source Voltage: 30V • RDS(on): 0.067 Ohms • ...
... 180mOhm @ 11A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1920 pF @...
...Power Electronics N-Channel DC-DC AC-DC converters Package 8-PQFN FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 85A (Tc) Drive ...
...Power Electronics Applications rain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 26A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 2...
... 1.05Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 666 pF @...
...Power Electronics Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4...
... 9.4mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max)...
...Power Electronic Module High-Performance Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) Drive Volt...
... 22mOhm @ 12A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @...