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...RDS (on) of 0.0015Ω, an ID of 60A and an avalanche energy rating of 8mJ. Key Features: • N-Channel Power MOSFET • RDS (on) of 0.0015Ω • ID of 60A • Avalanche Energy Rating of 8mJ • RoHS Compliant • Pb-Free W...
...MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche c...
...MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche c...
.... 7. High-Frequency Operation. 8. High Reliability and Temperature Performance. Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic ......
Product Listing: IRF3205PBF N-Channel MOSFET Product Features: Maximum Drain Source Voltage (Vdss): 55V Maximum Gate Source Voltage (Vgs): 20V Continuous Drain Current (Id): 25A On-Resistance (Rds): 0.0...
...MOSFET Features: • 100V Drain-Source Voltage • 25A Continuous Drain Current • 200mΩ @ 10V VGS, RDS(on) • Low Gate Charge • Low Crss • RoHS Compliant • Halogen and Antimony Free • ESD Protected • Lead-Free Ap...
...Listing: FQD16N25CTM MOSFET Power Electronics Features: • Low RDS(on) for high efficiency • Ultra low Qg and Qgd for fast switching • Low threshold voltage (Vth) for low power consumption • Low gate charge (...
... in TO-Leadless is the ideal choice for high switching frequencies. Specification Of IPT020N10N5ATMA1 Part Number IPT020N10N5ATMA1 Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C ...
High Speed Switching High Voltage MOSFET For Uninterruptible Power Supply *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-......
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit...
...MOSFET Product Description: The Si2307CDS-T1-GE3 MOSFET is a high-performance power MOSFET designed for use in a variety of power electronics applications. It features low on-resistance, fast switching time ...
...MOSFET Power Electronics Product Description: This MOSFET Power Electronics from IRF7862TRPBF is designed to provide high performance and reliable switching solutions for various applications. It features lo...
... Trench MOSFET technology for excellent RDS(ON) and low gate charge. It provides superior switching performance with fast switching times and low-level gate charge. With a wide range of VDSS, this device is ...
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit...
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate res...
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate res...
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate res...
OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate res...
...Switching Voltage Regulators 40V Buck Regulator 1 Features 4Vto40VInputRange 2 A Continuous Output Current Ultra-low 40 μA Operating Quiescent Current 90 mΩ High-Side MOSFET Minimum Switch-On Time: 75 ns Cur...
...Switching Voltage Regulators 500 mA SD Vtg Reg 1 Features Wide Input Voltage Range: 4.5 V to 42 V Internally Compensated Voltage Mode Control Stable with Low ESR Ceramic capacitors 200 mΩ N-Channel MOSFET Ou...