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MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

    Buy cheap MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors from wholesalers
     
    Buy cheap MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors from wholesalers
    • Buy cheap MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors from wholesalers

    MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

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    Brand Name : FREESCALE
    Certification : Lead free / RoHS Compliant
    Model Number : MRF6S9045NR1
    Price : Contact for Sample
    Delivery Time : Within 3days
    Payment Terms : T/T in advance, Paypal, Western Union
    Supply Ability : 5000
    • Product Details
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    MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

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    MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors


    Description:


    Designed for broadband commercial and industrial applications with

    frequencies up to 1000 MHz. The high gain and broadband performance of

    these devices make them ideal for large - signal, common - source amplifier

    applications in 28 volt base station equipment.

    • Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,

    IDQ = 350 mA, Pout = 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

    Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

    9.8 dB @ 0.01% Probability on CCDF.

    Power Gain — 22.7 dB

    Drain Efficiency — 32%

    ACPR @ 750 kHz Offset — -47 dBc @ 30 kHz Bandwidth


    Applications:


    GSM EDGE Application

    • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 350 mA,

    Pout = 16 Watts Avg., Full Frequency Band (921-960 MHz)

    Power Gain — 20 dB

    Drain Efficiency — 46%

    Spectral Regrowth @ 400 kHz Offset = -62 dBc

    Spectral Regrowth @ 600 kHz Offset = -78 dBc

    EVM — 1.5% rms

    GSM Application

    • Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts,

    Full Frequency Band (921-960 MHz)

    Power Gain — 20 dB

    Drain Efficiency — 68%

    • Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW

    Output Power

    • Characterized with Series Equivalent Large-Signal Impedance Parameters

    • Integrated ESD Protection

    • N Suffix Indicates Lead-Free Terminations

    • 200°C Capable Plastic Package

    • TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

    13 inch Reel.

    • TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

    13 inch Reel.


    Specifications:


    Datasheets

    MRF6S9045NR1,NBR1

    Standard Package

    500

    Category

    Discrete Semiconductor Products

    Family

    RF FETs

    Series

    -

    Packaging

    Tape & Reel (TR)

    Transistor Type

    LDMOS

    Frequency

    880MHz

    Gain

    22.7dB

    Voltage - Test

    28V

    Current Rating

    10µA

    Noise Figure

    -

    Current - Test

    350mA

    Power - Output

    10W

    Voltage - Rated

    68V

    Package / Case

    TO-270AA

    Supplier Device Package

    TO-270-2


    Competitive Advantage:


    Warranty :180days for all goods

    Free shipping:Order over $600 win a free shipment fee:goods weight below 3Kg.

    Mega Source Electronics stocks components ready to ship. Hard to find, obsolete and highly allocated integrated circuits and semiconductors are all can be found by us.

    Mega Source Electronics has established a well-developed logistics system and global logistics network, which can guarantee our service very quick, convenient and efficient.


    Tag:

    MRF6S9045NR1,MRF6S9045NBR1,MRF6S9045MR1,MRF6S9045MBR1

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