Product Description
The FM24W256 is a 256-Kbit nonvolatile memory employing an advanced
ferroelectric process. A ferroelectric random access memory or
F-RAM is nonvolatile and performs reads and writes similar to a
RAM. It provides reliable data retention for 151 years while
eliminating
the complexities, overhead, and system-level reliability problems
caused by EEPROM and other nonvolatile memories.
Unlike EEPROM, the FM24W256 performs write operations at bus speed.
No write delays are incurred. Data is written to the memory array
immediately after each byte is successfully transferred to the
device. The next bus cycle can commence without the need for data
polling.
In addition, the product offers substantial write endurance
compared with other nonvolatile memories. Also, F-RAM exhibits much
lower power
during writes than EEPROM since write operations do not require an
internally elevated power supply voltage for write circuits. The
FM24W256
is capable of supporting 1014 read/write cycles, or 100 million
times more write cycles than EEPROM.These capabilities make the
FM24W256 ideal
for nonvolatile memory applications, requiring frequent or rapid
writes.Examples range from data logging, where the number of write
cycles may
be critical, to demanding industrial controls where the long write
time of EEPROM can cause data loss. The combination of features
allows more
frequent data writing with less overhead for the system. The
FM24W256 provides substantial benefits to users of serial (I2C)
EEPROM as a hardware
drop-in replacement.
Features:
Mounting Style: SMD/SMT
Package / Case: SOIC-8
Memory Size: 256 kbit
Interface Type: 2-Wire
Organization: 32 k x 8
Supply Voltage - Min: 2.7 V
Supply Voltage - Max: 5.5 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C
Series: FM24W256-G
Packaging: Tube
Operating Supply Voltage: 3.3 V
Product Type: FRAM
Subcategory: Memory & Data Storage
Unit Weight: 0.019048 oz
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