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JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

    Buy cheap JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System from wholesalers
     
    Buy cheap JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System from wholesalers
    • Buy cheap JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System from wholesalers
    • Buy cheap JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System from wholesalers
    • Buy cheap JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System from wholesalers

    JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

    Ask Lasest Price
    Brand Name : JUYI
    Model Number : JY11M
    Price : Negotiable
    Payment Terms : L/C, T/T
    Supply Ability : 100000 pcs per month
    Delivery Time : 5-10days
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    JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

    JY11M

    N Channel Enhancement Mode Power MOSFET


    By incorporating advanced trench processing techniques, the JY11M accomplishes a remarkable cell density, concurrently minimizing on-resistance and boasting a high repetitive avalanche rating. The convergence of these attributes renders this design exceptionally efficient and dependable for power switching applications, as well as for a diverse range of other use cases. Get more details please click here.

    General Description

    The JY11M is a cutting-edge semiconductor device that incorporates advanced trench processing techniques. This innovative design achieves a remarkable cell density, effectively reducing on-resistance and achieving a high repetitive avalanche rating. These outstanding features make the JY11M exceptionally efficient and reliable for power switching applications, as well as a diverse range of other use cases.

    With a voltage rating of 100V and a current rating of 110A, the JY11M offers excellent performance. It boasts a low on-resistance (RDS(ON)) of 6.5mΩ at a gate-source voltage (VGS) of 10V, ensuring efficient power switching operations. The device also features fast switching and reverse body recovery, enabling quick and efficient switching operations.

    Moreover, the JY11M is fully characterized in terms of avalanche voltage and current, ensuring reliable operation under extreme conditions. Its excellent package design facilitates effective heat dissipation, enhancing the overall reliability and longevity of the device.

    In summary, the JY11M is an advanced semiconductor that combines a high cell density, minimized on-resistance, and a high repetitive avalanche rating. These qualities make it an exceptionally efficient and dependable choice for power switching applications, as well as for various other use cases where robust performance is required.

    Features

    ● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V
    ● Fast switching and reverse body recovery
    ● Fully characterized avalanche voltage and current
    ● Excellent package for good heat dissipation

    Applications

    ● Switching application
    ● Hard switched and high frequency circuits

    ● Power Management for Inverter Systems


    PIN Description

    To-220-3 Package Outline

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    Quality JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System for sale
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