SN74LVC1G125 (ACTIVE)
Single Bus Buffer Gate With 3-State Outputs
Description
This bus buffer gate is designed for 1.65-V to 5.5-V VCCoperation.
The SN74LVC1G125 device is a single line driver with a 3-state
output. The output is disabled when the output-enable (OE) input is
high.
The CMOS device has high output drive while maintaining low static
power dissipation over a broad VCC operating
Features
- Available in the Ultra Small 0.64-mm2
Package (DPW) With 0.5-mm Pitch - Supports 5-V VCC Operation
- Inputs Accept Voltages to 5.5 V
- Provides Down Translation to VCC
- Max tpd of 3.7 ns at 3.3 V
- Low Power Consumption, 10-μA Max ICC
DESCRIPTION/ORDERING INFORMATION
SN74LVC1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUT
SCES223O–APRIL 1999–REVISED FEBRUARY 2007
• Available in the Texas Instruments
• I off Supports Partial-Power-Down Mode NanoStar™ and NanoFree™
Packages Operation
• Supports 5-V VCC Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• Inputs Accept Voltages to 5.5 V • Max t
• ESD Protection Exceeds JESD 22 pd of 3.7 ns at 3.3 V
– 2000-V Human-Body Model (A114-A)
• Low Power Consumption, 10-µA Max I CC
– 200-V Machine Model (A115-A)
• ±24-mA Output Drive at 3.3 V
– 1000-V Charged-Device Model (C101)
This bus buffer gate is designed for 1.65-V to 5.5-V VCC operation.
The SN74LVC1G125 is a single line driver with a 3-state output. The
output is disabled when the output-enable (OE) input is high.
NanoStar™ and NanoFree™ package technology is a major breakthrough
in IC packaging concepts, using the die as the package. This device
is fully specified for partial-power-down applications using I off
. The I off circuitry disables the outputs, preventing damaging
current backflow through the device when it is powered down. To
ensure the high-impedance state during power up or power down, OE
should be tied to VCC through a pullup resistor; the minimum value
of the resistor is determined by the current-sinking capability of
the driver.
| ABSOLUTE MAXIMUM RATINGS(1) |
Supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . .
. . 7 V Input voltage, VI: ’LS. . . . . . . . . . . . . . . . . . . . . . .
. 7 V L’S . . . . . . . . . . . .. . . 5.5 V Off-state output voltage . . . . . . . . . . . . . 5.5 V Package thermal impedance, θJA (see Note 2): DB package . . . . . .
. . . . . . . 70 C/W DW package . . . . . . . . . . . . . . . . . . . 58 °C/W N package . . . . . . . . . . . . . . . . . . . . . . 69 °C/W NS package . . . . . . . . . . . . . . . . . . . . . . . . .60 °C/W Storage temperature range, Tstg . . . . . . –65°C to 150°C |
PART OF STOCK
| TRANS. FDS9435A | 1500 | FSC | 15+ | SOP-8 |
| DIODO MMBD4148,215 | 300000 | | 15+ | SOT23-3 |
| C.I L7805CD2T-TR | 2500 | ST | 14+ | D2PAK |
| FDS6990A | 1500 | FSC | 15+ | SOP-8 |
| NDS9952A | 1500 | FSC | 15+ | SOP-8 |
| SN65HVD485EDR | 1500 | TI | 16+ | SOP-8 |
| SMBJ8.5CA | 7500 | VISHAY | 16+ | SMB |
| PIC24FJ16GA004-I/PT | 1500 | MICROCHIP | 13+ | TQFP-44 |
| C.I TLC072CDGNR | 5000 | TI | 05+ | MSOP-8 |
| C.I SN74LS374N | 2000 | TI | 15+ | DIP-20 |
| TRANS. BC817-16LT1G | 300000 | ON | 12+ | SOT-23 |
| C.I TL074CN | 1000 | TI | 12+ | DIP-14 |
| OPTOACOPLADOR MOC3063SM | 20000 | FSC | 14+ | SOP-6 |
| TRIAC BT151-500R | 300000 | | 16+ | TO-220 |
| C.I MM74HC164MX | 25000 | FSC | 05+ | SOP-14 |
| C.I WS79L05 | 100000 | WS | 16+ | TO-92 |
| RES RL1206FR-070R75L | 100000 | YAGEO | 16+ | SMD1206 |
| RES RC1206FR-071R5L | 500000 | YAGEO | 16+ | SMD1206 |
| RES RC1206FR-071R2L | 500000 | YAGEO | 16+ | SMD1206 |
| RES RL1206FR-070R68L | 1000000 | YAGEO | 16+ | SMD1206 |
| RES RC0402FR-0722KL | 3000000 | YAGEO | 16+ | SMD0402 |
| RES RC0402FR-0756RL | 2000000 | YAGEO | 16+ | SMD0402 |
| RES RC0402FR-0724RL | 2000000 | YAGEO | 16+ | SMD0402 |
| RES RC1206JR-072ML | 500000 | YAGEO | 16+ | SMD1206 |
| CAP 1206 22PF 1KV NP0 CL31C220JIFNFNE | 600000 | SAMSUNG | 16+ | SMD1206 |
