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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

    Buy cheap Ultra Low On-Resistance  HEXFET Power MOSFET  P-Channel MOSFET SOT-23 Footprint  Fast Switching   IRLML6402TRPBF from wholesalers
     
    Buy cheap Ultra Low On-Resistance  HEXFET Power MOSFET  P-Channel MOSFET SOT-23 Footprint  Fast Switching   IRLML6402TRPBF from wholesalers
    • Buy cheap Ultra Low On-Resistance  HEXFET Power MOSFET  P-Channel MOSFET SOT-23 Footprint  Fast Switching   IRLML6402TRPBF from wholesalers

    Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

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    Brand Name : IRF
    Model Number : IRLML6402TRPBF
    Certification : Original Factory Pack
    Price : Negotiation
    Payment Terms : T/T, Western Union,PayPal
    Supply Ability : 5200PCS
    Delivery Time : 1 Day
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    Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

    HEXFET Power MOSFET T


    ♦Ultra Low On-Resistance

    ♦P-Channel MOSFET


    ♦SOT-23 Footprint

    ♦Low Profile (<1.1mm)


    ♦Available in Tape and Reel

    ♦Fast Switching


    These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.


    A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.


    ParameterMax.Units
    VDSDrain- Source Voltage-20V
    ID @ TA = 25°CContinuous Drain Current, VGS @ -4.5V-3.7A
    ID @ TA= 70°CContinuous Drain Current, VGS @ -4.5V-2.2
    IDMPulsed Drain Current-22
    PD @TA = 25°CPower Dissipation1.3W
    PD @TA = 70°CPower Dissipation0.8
    Linear Derating Factor0.01W/°C
    EASSingle Pulse Avalanche Energy11mJ
    VGSGate-to-Source Voltage± 12V

    Quality Ultra Low On-Resistance  HEXFET Power MOSFET  P-Channel MOSFET SOT-23 Footprint  Fast Switching   IRLML6402TRPBF for sale
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