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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

    Buy cheap PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching from wholesalers
     
    Buy cheap PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching from wholesalers
    • Buy cheap PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching from wholesalers

    PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

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    Model Number : 2SC5707
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    PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

    PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching


    Applications

    • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash


    Features

    • Adoption of FBET and MBIT processes.

    • Large current capacitance.

    • Low collector-to-emitter saturation voltage.

    • High-speed switching.

    • High allowable power dissipation.


    Specifications ( ) : 2SA2040

    Absolute Maximum Ratings at Ta=25°C

    ParameterSymbolConditionsRatingsUnit
    Collector-to-Base VoltageVCBO--(--50)100V
    Collector-to-Emitter VoltageVCES--(--50)100V
    Collector-to-Emitter VoltageVCEO--(--)50V
    Emitter-to-Base VoltageVEBO--(--)6V
    Collector CurrentIC--(--)8A
    Collector Current (Pulse)ICP--(--)11A
    Base CurrentIB--(--)2A
    Collector DissipationPC

    --

    Tc=25°C

    1.0

    15

    W

    W

    Junction TemperatureTj--150°C
    Storage TemperatureTstg----55 to +150°C

    Electrical Characteristics at Ta=25°C

    ParameterSymbolConditionsmin.Typ.max.unit
    Collector Cutoff CurrentICBOVCB=(--)40V, IE=0A----(--)0.1µA
    Emitter Cutoff CurrentIEBOVEB=(--)4V, IC=0A----(--)0.1µA
    DC Current GainhFEVCE=(--)2V, IC=(--)500mA200--560--
    Gain-Bandwidth ProductfTVCE=(--)10V, IC=(--)500mA--(290)330--MHz
    Output CapacitanceCobVCB=(--)10V, f=1MHz--(50)28--pF
    Collector-to-Emitter Saturation Voltage

    VCE(sat)1

    VCE(sat)2

    IC=(--)3.5A, IB=(--)175mA

    IC=(--)2A, IB=(--)40mA

    --

    --

    (--230)160

    (--240)110

    (--390)240

    (--400)170

    mV

    mV

    Base-to-Emitterr Saturation VoltageVBE(sat)IC=(--)2A, IB=(--)40mA--(--)0.83(--)1.2V
    Collector-to-Base Breakdown VoltageV(BR)CBOIC=(--)10µA, IE=0A(--50)100----V
    Collector-to-Emitter Breakdown VoltageV(BR)CESIC=(--)100µA, RBE=0Ω(--50)100----V
    Collector-to-Emitter Breakdown VoltageV(BR)CEOIC=(--)1mA, RBE=∞(--)50----V
    Emitter-to-Base Breakdown VoltageV(BR)EBOIE=(--)10µA, IC=0A(--)6----V
    Turn-On TimetonSee specified Test Circuit.--(40)30--ns
    Storage TimetstgSee specified Test Circuit.--(225)420--ns
    Fall TimetfSee specified Test Circuit.--25--ns

    Package Dimensions Package Dimensions

    unit : mm unit : mm

    7518-003 7003-003


    Switching Time Test Circuit


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