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| Model Number : | BSP315 |
| Certification : | Original Factory Pack |
| Price : | Negotiation |
| Payment Terms : | T/T , Western Union,PayPal |
| Supply Ability : | 6800PCS |
| Delivery Time : | 1 Day |
Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS
• P channel
• Enhancement mode
• Logic Level
• VGS(th) = -0.8...-2.0 V
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )
Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T
Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Drain source voltage | VDS | -50 | V |
Drain-gate voltage RGS = 20 kΩ | VDGR | -50 | |
| Gate source voltage | VGS | ± 20 | |
Continuous drain current TA = 39 °C | ID | -1.1 | A |
DC drain current, pulsed TA = 25 °C | IDpuls | -4.4 | |
Power dissipation TA = 25 °C | Ptot | 1.8 | W |
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