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STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

    Buy cheap STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA from wholesalers
     
    Buy cheap STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA from wholesalers
    • Buy cheap STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA from wholesalers

    STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA

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    Brand Name :
    Model Number : STD4NK60ZT4
    Certification : new & original
    Price : Negotiate
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    Supply Ability : 8700pcs
    Delivery Time : 1 day
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    STD4NK60ZT4 power mosfet module Power Mosfet Transistor TRANSISTOR | MOSFET | N-CHANNEL | TO-252AA


    STP4NK60Z - STP4NK60ZFP
    STB4NK60Z-STD4NK60Z-STD4NK60Z-1

    N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D2PAK
    Zener-Protected SuperMESHTMPower MOSFET

    ■ TYPICAL RDS(on) = 1.76 Ω
    ■ EXTREMELY HIGH dv/dt CAPABILITY
    ■ 100% AVALANCHE TESTED
    ■ GATE CHARGE MINIMIZED
    ■ VERY LOW INTRINSIC CAPACITANCES
    ■ VERY GOOD MANUFACTURING REPEATIBILITY

    DESCRIPTION
    The SuperMESHTM series is obtained through an extreme optimization of ST’s well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.

    APPLICATIONS
    ■ HIGH CURRENT, HIGH SPEED SWITCHING
    ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
    ■ LIGHTING

    ABSOLUTE MAXIMUM RATINGS

    SymbolParameterValueUnit
    STP4NK60Z STB4NK60ZSTP4NK60ZFPSTD4NK60Z STD4NK60Z-1
    VDSDrain-source Voltage (VGS = 0)600V
    VDGRDrain-gate Voltage (RGS = 20 kΩ)600V
    VGSGate- source Voltage± 30V
    IDDrain Current (continuous) at TC = 25°C44 (*)4A
    IDDrain Current (continuous) at TC = 100°C2.52.5 (*)2.5A
    IDM (l )Drain Current (pulsed)1616 (*)16A
    PTOTTotal Dissipation at TC = 25°C702570W
    Derating Factor0.560.20.56W/°C
    VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)3000V
    dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
    VISOInsulation Withstand Voltage (DC)-2500-V

    Tj

    Tstg

    Operating Junction Temperature

    Storage Temperature

    -55 to 150

    -55 to 150

    °C

    °C

    (l ) Pulse width limited by safe operating area
    (1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
    (*) Limited only by maximum temperature allowed



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