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MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors

    Buy cheap MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors from wholesalers
     
    Buy cheap MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors from wholesalers
    • Buy cheap MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors from wholesalers

    MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors

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    Brand Name :
    Model Number : MJD112T4G
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8600pcs
    Delivery Time : 1 day
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    MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors


    MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors


    MJD112 (NPN)

    MJD117 (PNP)

    Complementary DarliCM GROUPon Power Transistors


    DPAK For Surface Mount Applications


    SILICON POWER TRANSISTORS

    2 AMPERES

    100 VOLTS

    20 WATTS


    Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.


    Features

    • Pb−Free Packages are Available

    • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

    • Straight Lead Version in Plastic Sleeves (“−1” Suffix)

    • Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix)

    • Electrically Similar to Popular TIP31 and TIP32 Series


    MAXIMUM RATINGS

    RatingSymbolMaxUnit
    Collector−Emitter VoltageVCEO100Vdc
    Collector−Base VoltageVCB100Vdc
    Emitter−Base VoltageVEB5Vdc

    Collector Current − Continuous

    Peak

    IC

    2

    4

    Adc
    Base CurrentIB50mAdc

    Total Power Dissipation @ TC = 25°C

    Derate above 25°C

    PD

    20

    0.16

    W

    W/°C

    Total Power Dissipation* @ TA = 25°C

    Derate above 25°C

    PD

    1.75

    0.014

    W

    W/°C

    Operating and Storage Junction Temperature RangeTJ, Tstg−65 to +150°C

    Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.


    MARKING DIAGRAMS


    PACKAGE DIMENSIONS

    DPAK

    CASE 369C

    ISSUE O


    DPAK−3

    CASE 369D−01

    ISSUE B


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