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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

    Buy cheap IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet from wholesalers
     
    Buy cheap IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet from wholesalers
    • Buy cheap IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet from wholesalers

    IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

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    Brand Name :
    Model Number : IRFR9120N
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 9500pcs
    Delivery Time : 1 day
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    IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet


    IRFR/U9120N

    HEXFET® Power MOSFET


    • Ultra Low On-Resistance

    • P-Channel

    • Surface Mount (IRFR9120N)

    • Straight Lead (IRFU9120N)

    • Advanced Process Technology

    • Fast Switching

    • Fully Avalanche Rated


    Description

    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


    The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.



    Absolute Maximum Ratings

    ParameterMax.Units
    ID @ TC = 25°CContinuous Drain Current, VGS @ -10V-6.6A
    ID @ TC = 100°CContinuous Drain Current, VGS @ -10V-4.2A
    IDMPulsed Drain Current -26A
    PD @TC = 25°CPower Dissipation40W
    Linear Derating Factor0.32W/°C
    VGSGate-to-Source Voltage± 20V
    EASSingle Pulse Avalanche Energy‚100mJ
    IARAvalanche Current-6.6A
    EARRepetitive Avalanche Energy4.0mJ
    dv/dtPeak Diode Recovery dv/dt ƒ-5.0V/ns
    TJ , TSTG​Operating Junction and Storage Temperature Range-55 to + 150°C
    Soldering Temperature, for 10 seconds300 (1.6mm from case )°C

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