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IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

    Buy cheap IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel from wholesalers
     
    Buy cheap IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel from wholesalers
    • Buy cheap IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel from wholesalers

    IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

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    Brand Name :
    Model Number : IRF7601PBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 9000pcs
    Delivery Time : 1 day
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    IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel


    IRF7601 HEXFET® Power MOSFET


    • Generation V Technology

    • Ultra Low On-Resistance

    • N-Channel MOSFET

    • Very Small SOIC Package

    • Low Profile (<1.1mm)

    • Available in Tape & Reel

    • Fast Switching


    Description

    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


    The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.


    Absolute Maximum Ratings

    ParameterMax.Units
    ID @ TA = 25°CContinuous Drain Current, VGS @ 4.5V5.7A
    ID @ TA = 70°CContinuous Drain Current, VGS @ 4.5V4.6A
    IDMPulsed Drain Current 30A
    PD @TA = 25°CPower Dissipation1.8W
    Linear Derating Factor14mW/°C
    VGSGate-to-Source Voltage± 12V
    dv/dtPeak Diode Recovery dv/dt ‚5.0V/ns
    TJ, TSTGJunction and Storage Temperature Range-55 to + 150°C

    Stock Offer (Hot Sell)

    Part No.QuantityBrandD/CPackage
    LD1117S25TR39000ST13+SOT-223
    LD1117S33CTR32000ST16+SOT-223
    LD39015M18R8024ST16+SOT23-5
    LD39300PT33-R6785ST14+TO-252
    LD7531AMGL16615LD16+SOT23-6
    LD7830GR9996LD15+SOP-8
    LDB212G4005C-00156000MURATA14+SMD
    LF25CDT21498ST13+TO-252
    LF347MX7640NS00+SOP-14
    LFB212G45SG8A19240000MURATA16+SMD
    LFCN-400+1736MINI14+SMD
    LFCN-80+3554MINI15+SMD
    LFCN-900+3324MINI15+SMD
    LFE2M100E-6FN900C-5I256LATTICE16+BGA900
    LFXP2-8E-5TN144C1363LATTICE16+QFP144
    LH1518AABTR3172VISHAY04+SMD-6
    LH1520AAC8563VISHAY13+SOP-8
    LH1540AABTR5958VISHAY00+SOP-6
    LH5116NA-1014603SHARP13+SOP-24
    LHI878/390214674HEIMANN10+CAN-3
    LIS2DH12TR7611ST15+LGA12
    LIS3DHTR4847ST14+LGA16
    LL400415000ST16+LL41
    LL4148-GS0845000VISHAY15+LL34
    LLQ2012-F56NJ12000TOKO16+SMD
    LM1086CSX-3.321569NS15+TO-263
    LM1086CT-3.315605NS15+TO-220
    LM111J-85202NSC15+CDIP-8
    LM19CIZ4073NS16+TO-92
    LM201AN4387ON16+DIP-8

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