Integrated Synthesizer and VCO ADF4360-4
FEATURES
Output frequency range: 1450 MHz to 1750 MHz
Divide-by-2 output
3.0 V to 3.6 V power supply
1.8 V logic compatibility
Integer-N synthesizer
Programmable dual-modulus prescaler 8/9, 16/17, 32/33
Programmable output power level
3-wire serial interface
Analog and digital lock detect
Hardware and software power-down mode
APPLICATIONS
Wireless handsets (DECT, GSM, PCS, DCS, WCDMA)
Test equipment
Wireless LANs
CATV equipment
GENERAL DESCRIPTION
The ADF4360-4 is a fully integrated integer-N synthesizer and
voltage-controlled oscillator (VCO). The ADF4360-4 is designed for
a center frequency of 1600 MHz. In addition, a divide-by-2 option
is available, whereby the user gets an RF output of between 725 MHz
and 875 MHz.
Control of all the on-chip registers is through a simple 3-wire
interface. The device operates with a power supply ranging from 3.0
V to 3.6 V and can be powered down when not in use.
FUNCTIONAL BLOCK DIAGRAM
TIMING CHARACTERISTICS
AVDD = DVDD = VVCO = 3.3 V ± 10%;AGND = DGND = 0 V; 1.8 V and 3 V
logic levels used; TA = TMIN to TMAX, unless otherwise noted.
| Parameter | Limit at TMIN to TMAX (B Version) | Unit | Test Conditions/Comments |
t1 | 20 | ns min | LE Setup Time |
| t2 | 10 | ns min | DATA to CLOCK Setup Time |
| t3 | 10 | ns min | DATA to CLOCK Hold Time |
| t4 | 25 | ns min | CLOCK High Duration |
| t5 | 25 | ns min | CLOCK Low Duration |
| t6 | 10 | ns min | CLOCK to LE Setup Time |
| t7 | 20 | ns min | LE Pulse Width |
ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted.
| Parameter Rating |
AVDD to GND1 −0.3 V to +3.9 V AVDD to DVDD −0.3 V to +0.3 V VVCO to GND −0.3 V to +3.9 V VVCO to AVDD −0.3 V to +0.3 V Digital I/O Voltage to GND −0.3 V to VDD + 0.3 V Analog I/O Voltage to GND −0.3 V to VDD + 0.3 V REFIN to GND −0.3 V to VDD + 0.3 V Operating Temperature Range Maximum Junction Temperature 150°C CSP θJA Thermal Impedance (Paddle Soldered) 50°C/W (Paddle Not Soldered) 88°C/W Lead Temperature, Soldering Vapor Phase (60 sec) 215°C Infrared (15 sec) 220°C |
1 GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings may
cause permanent damage to the device. This is a stress rating only;
functional operation of the device at these or any other conditions
above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. This
device is a high performance RF integrated circuit with an ESD
rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
