RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A)

Switching (200V, 10A)

RDN100N20

Features

1) Low on-resistance.

2) Low input capacitance.

3) Exellent resistance to damage from static electricity.

Application

Switching

Structure

Silicon N-channel

MOS FET

Absolute maximum ratings (Ta=25°C)

∗1 Pw ≤ 10µs, Duty cycle ≤ 1%

∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C

External dimensions (Unit : mm)

Equivalent circuit

∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.

Stock Offer (Hot Sell)

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