Description
The IR2111(S) is a high voltage, high speed power MOSFET and IGBT
driver with dependent high and low side referenced output channels
designed for half bridge applications. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized monolithic construction.
Logic input is compatible with standard CMOS outputs. The output
drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. Internal deadtime is provided to
avoid shoot-through in the output half-bridge. The floating channel
can be used to drive an N-channel power MOSFET or IGBT in the high
side configuration which operates up to 600 volts.
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• Internally set deadtime
• High side output in phase with input
• Also available LEAD-FREE
