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SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor

    Buy cheap SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor from wholesalers
     
    Buy cheap SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor from wholesalers
    • Buy cheap SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor from wholesalers
    • Buy cheap SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor from wholesalers

    SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor

    Ask Lasest Price
    Brand Name :
    Model Number : SPA04N60C3
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8700pcs
    Delivery Time : 1 day
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    SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor


    SPP04N60C3, SPB04N60C3
    Final data SPA04N60C3

    Cool MOSô Power Transistor

    VDS @ Tjmax650V
    RDS(on)0.95
    ID4.5A

    Feature
    • New revolutionary high voltage technology
    • Ultra low gate charge
    • Periodic avalanche rated
    • Extreme dv/dt rated
    • High peak current capability
    • Improved transconductance
    • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

    P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Maximum Ratings

    ParameterSymbolValueUnit
    SPP_BSPA

    Continuous drain current

    TC = 25 °C

    TC = 100 °C

    ID

    4.5

    2.8


    4.51)

    2.81)

    A
    Pulsed drain current, tp limited by TjmaxID puls13.513.5A
    Avalanche energy, single pulse ID=3.4, VDD=50VEAS130130mJ
    Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD=50VEAR0.40.4mJ
    Avalanche current, repetitive tAR limited by TjmaxIAR4.54.5A
    Gate source voltage staticVGS±20±20V
    Gate source voltage AC (f >1Hz)VGS±30±30
    Power dissipation, TC = 25°CPtot5031W
    Operating and storage temperatureTj , Tstg-55...+150°C

    Drain Source voltage slope
    VDS = 480 V, ID = 4.5 A, Tj = 125 °C

    dv/dt50V/ns


    P-TO-220-3-1


    P-TO-263-3-2 (D2-PAK)


    P-TO-220-3-31 (FullPAK)


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