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IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

    Buy cheap IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET from wholesalers
     
    Buy cheap IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET from wholesalers
    • Buy cheap IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET from wholesalers

    IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET

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    Brand Name :
    Model Number : IRFBC30
    Certification : new & original
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    Supply Ability : 8500pcs
    Delivery Time : 1 day
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    IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET


    IRFBC30

    N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET


    TYPEVDSSRDS(on)ID
    IRFBC30600 V< 2.2 Ω3.6 A

    TO-220


    ■ TYPICAL RDS(on) = 1.8 Ω

    ■ EXTREMELY HIGH dv/dt CAPABILITY

    ■ 100% AVALANCHE TESTED

    ■ VERY LOW INTRINSIC CAPACITANCES

    ■ GATE CHARGE MINIMIZED


    DESCRIPTION

    The PowerMESHTM ΙΙ is the evolution of the first generation of MESH OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.


    APPLICATIONS

    ■ HIGH CURRENT, HIGH SPEED SWITCHING

    ■ SWITH MODE POWER SUPPLIES (SMPS)

    ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER


    ABSOLUTE MAXIMUM RATINGS

    SymbolParameterValueUnit
    VDSDrain-source Voltage (VGS = 0)600V
    VDGRDrain- gate Voltage (RGS = 20 kΩ)600V
    VGSGate-source Voltage± 20V
    IDDrain Current (continuous) at Tc = 25 ℃3.6A
    IDDrain Current (continuous) at Tc = 100 ℃2.3A
    IDM (•)Drain Current (pulsed)14A
    PtotTotal Dissipation at Tc = 25 ℃75W
    Derating Factor0.6W/℃
    dv/dt(1)Peak Diode Recovery voltage slope3V/ns
    TstgStorage Temperature-65 to 150
    TjMax. Operating Junction Temperature150

    (•) Pulse width limited by safe operating area

    ( 1) ISD ≤3.6 A, di/dt ≤ 60 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX


    INTERNAL SCHEMATIC DIAGRAM


    TO-220 MECHANICAL DATA


    Quality IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET for sale
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