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IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

    Buy cheap IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs from wholesalers
     
    Buy cheap IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs from wholesalers
    • Buy cheap IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs from wholesalers

    IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

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    Model Number : IRF9540
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    IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs


    IRF9540, RF1S9540SM

    19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs


    These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

    Formerly Developmental Type TA17521.


    Features

    • 19A, 100V

    • rDS(ON) = 0.200Ω

    • Single Pulse Avalanche Energy Rated

    • SOA is Power Dissipation Limited

    • Nanosecond Switching Speeds

    • Linear Transfer Characteristics

    • High Input Impedance

    • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


    Absolute Maximum Ratings TC = 25℃, Unless Otherwise Specified

    PARAMETERSYMBOLIRF9540, RF1S9540SMUNITS
    Drain to Source Voltage (Note 1)VDS-100V
    Drain to Gate Voltage (RGS = 20kΩ) (Note 1)VDGR-100V

    Continuous Drain Current

    TC = 100℃

    ID

    -19

    -12

    A

    A

    Pulsed Drain Current (Note 3)IDM-76A
    Gate to Source VoltageVGS±20V
    Maximum Power Dissipation (Figure 1)PD150W
    Linear Derating Factor (Figure 1)1W/℃
    Single Pulse Avalanche Energy Rating (Note 4)EAS960mJ
    Operating and Storage TemperatureTJ, TSTG-55 to 175

    Maximum Temperature for Soldering

    Leads at 0.063in (1.6mm) from Case for 10s

    Package Body for 10s, See Techbrief 334


    TL

    Tpkg


    300

    260


    CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

    NOTE: 1. TJ = 25℃ to 150℃.


    Symbol


    Packaging

    JEDEC TO-220AB JEDEC TO-263AB


    Test Circuits and Waveforms


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    Quality IRF9540 power mosfet ic Power Mosfet Transistor 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs for sale
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