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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET

    Buy cheap IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET from wholesalers
     
    Buy cheap IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET from wholesalers
    • Buy cheap IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET from wholesalers

    IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET

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    Brand Name :
    Model Number : IRF7311TRPBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7600pcs
    Delivery Time : 1 day
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    IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET


    IRF7311

    HEXFET® Power MOSFET


    • Generation V Technology
    • Ultra Low On-Resistance
    • Dual N-Channel MOSFET
    • Surface Mount
    • Fully Avalanche Rated

    Description

    Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


    The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.


    Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

    SymbolMaximumUnits
    Drain-Source VoltageVDS20V
    Gate-Source VoltageVGS±12V
    Continuous Drain Current… 1TA = 25°CID6.6A
    TA = 70°C5.3
    Pulsed Drain CurrentIDM26A
    Continuous Source Current (Diode Conduction)IS2.5A
    Maximum Power Dissipation …1TA = 25°CPD2.0W
    TA = 70°C1.3
    Single Pulse Avalanche Energy ‚2EAS100mJ
    Avalanche CurrentIAR4.1A
    Repetitive Avalanche EnergyEAR0.20mJ
    Peak Diode Recovery dv/dt ƒ3dv/dt5.0V/ ns
    Junction and Storage Temperature RangeTJ, TSTG-55 to + 150°C

    Notes:

    1. Surface mounted on 1 in square Cu board

    2. Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A.

    ƒ3. ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C


    Stock Offer (Hot Sell)

    Part No.QuantityBrandD/CPackage
    IRF3707PBF6217IR11+TO-220
    IRF5210PBF2546IR15+TO-220
    IRF5800TRPBF54000IR16+TSOP-6
    IRF6218PBF8426IR06+TO-220AB
    IRF640NPBF5610IR15+TO-220
    IRF640NSTRLPBF4905IR16+TO-263
    IRF6638TRPBF4492IR13+SMD
    IRF7303TRPBF15463IR14+SOP-8
    IRF7328TRPBF6288IR13+SOP-8
    IRF740B49000FSC16+TO-220
    IRF740PBF11487IR16+TO-220
    IRF7416TRPBF23190IR16+SOP-8
    IRF7494TRPBF9525IR14+SOP-8
    IRF7907TRPBF12836IR13+SOP-8
    IRF8010PBF17656IR16+TO-220
    IRF840PBF14327VISHAY16+TO-220
    IRF8788TRPBF21214IR12+SOP-8
    IRF9530NPBF5539IR16+TO-220
    IRF9620PBF3435VISHAY13+TO-220
    IRF9Z24N9496IR16+TO-220
    IRFB3004PBF8497IR09+TO-220
    IRFB31N20D6973IR14+TO-220
    IRFB3207ZPBF16234IR15+TO-220
    IRFB3306PBF7959IR13+TO-220
    IRFB4227PBF14319IR16+TO-220
    IRFB4310PBF7645IR16+TO-220
    IRFB4332PBF5199IR16+TO-220
    IRFB4332PBF4735IR16+TO-220
    IRFB52N15DPBF7716IR15+TO-220
    IRFI4019HG-117P4847IR14+TO-220-5

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