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P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

    Buy cheap P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET from wholesalers
     
    Buy cheap P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET from wholesalers
    • Buy cheap P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET from wholesalers

    P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET

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    Brand Name :
    Model Number : P3NK90ZFP
    Certification : new & original
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    Supply Ability : 7000pcs
    Delivery Time : 1 day
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    P3NK90ZFP Power Mosfet Transistor N-CHANNEL SWITCHING Power MOSFET


    STP3NK90Z - STP3NK90ZFP

    STD3NK90Z - STD3NK90Z-1

    N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK

    Zener-Protected SuperMESH™Power MOSFET


    • TYPICAL RDS(on) = 4.1 Ω

    • EXTREMELY HIGH dv/dt CAPABILITY

    • 100% AVALANCHE TESTED

    • GATE CHARGE MINIMIZED

    • VERY LOW INTRINSIC CAPACITANCES

    • VERY GOOD MANUFACTURING REPEATIBILITY


    DESCRIPTION

    The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.


    APPLICATIONS

    • HIGH CURRENT, HIGH SPEED SWITCHING

    • IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

    • LIGHTING



    ABSOLUTE MAXIMUM RATINGS

    SymbolParameterValueUnit
    STP3NK90ZSTP3NK90ZFP

    STD3NK90Z

    STD3NK90Z-1

    VDSDrain-source Voltage (VGS = 0)900V
    VDGRDrain-gate Voltage (RGS = 20 kΩ)900V
    VGSGate- source Voltage± 30V
    IDDrain Current (continuous) at TC = 25°C33 (*)3A
    IDDrain Current (continuous) at TC = 100°C1.891.89 (*)1.89A
    IDM (•)Drain Current (pulsed)1212 (*)12A
    PTOTTotal Dissipation at TC = 25°C902590W
    Derating Factor0.720.20.72W/°C
    VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)4000V
    dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
    VISOInsulation Withstand Voltage (DC)-2500-V

    Tj

    Tstg

    Operating Junction Temperature

    Storage Temperature

    -55 to 150°C

    (•) Pulse width limited by safe operating area

    (1) ISD ≤3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

    (*) Limited only by maximum temperature allowed


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