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IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

    Buy cheap IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor from wholesalers
     
    Buy cheap IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor from wholesalers
    • Buy cheap IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor from wholesalers

    IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

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    Brand Name :
    Model Number : IRFB4229PBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 9000pcs
    Delivery Time : 1 day
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    IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor


    PDP SWITCH IRFB4229PbF

    Features

    • Advanced Process Technology

    • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

    • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,

    Energy Recovery and Pass Switch Applications

    • Low QG for Fast Response

    • High Repetitive Peak Current Capability for Reliable Operation

    • Short Fall & Rise Times for Fast Switching

    • 175°C Operating Junction Temperature for Improved Ruggedness

    • Repetitive Avalanche Capability for Robustness and Reliability


    Key Parameters

    VDS min250V
    VDS (Avalanche) typ.300V
    RDS(ON) typ. @ 10V38
    IRP max @ TC= 100°C91A
    TJ max175°C

    Description

    This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.


    Absolute Maximum Ratings

    ParameterMax.Units
    VGSGate-to-Source Voltage±30V
    ID @ TC = 25°CContinuous Drain Current, VGS @ 10V46A
    ID @ TC = 100°CContinuous Drain Current, VGS @ 10V33A
    IDMPulsed Drain Current180A
    IRP @ TC = 100°CRepetitive Peak Current91A
    PD @TC = 25°CPower Dissipation330W
    PD @TC = 100°CPower Dissipation190W
    Linear Derating Factor2.2W/°C
    TJ TSTGOperating Junction and Storage Temperature Range-40 to + 175°C
    Soldering Temperature for 10 seconds300°C
    Mounting Torque, 6-32 or M3 Screw10lbin (1.1Nm)N

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