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IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

    Buy cheap IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET from wholesalers
     
    Buy cheap IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET from wholesalers
    • Buy cheap IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET from wholesalers

    IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

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    Brand Name :
    Model Number : IRF1010EPBF
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 9000pcs
    Delivery Time : 1 day
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    IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET


    IRF1010EPbF

    HEXFET® Power MOSFET


    • Advanced Process Technology

    • Ultra Low On-Resistance

    • Dynamic dv/dt Rating

    • 175°C Operating Temperature

    • Fast Switching

    • Fully Avalanche Rated

    • Lead-Free


    Description

    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.


    The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.



    Absolute Maximum Ratings

    ParameterMax.Unit
    ID @ TC = 25°CContinuous Drain Current, VGS @ 10V84A
    ID @ TC = 100°CContinuous Drain Current, VGS @ 10V59A
    IDMPulsed Drain Current330A
    PD @TC = 25°CPower Dissipation200W
    Linear Derating Factor1.4W/°C
    VGSGate-to-Source Voltage± 20V
    IARAvalanche Current50A
    EARRepetitive Avalanche Energy17mJ
    dv/dtPeak Diode Recovery dv/dt4.0V/ns
    TJ TSTGOperating Junction and Storage Temperature Range-55 to + 175°C
    Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
    Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)

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