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STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

    Buy cheap STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET from wholesalers
     
    Buy cheap STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET from wholesalers
    • Buy cheap STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET from wholesalers

    STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET

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    Brand Name :
    Model Number : STF21NM50N
    Certification : new & original
    Price : Negotiate
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    Supply Ability : 9500pcs
    Delivery Time : 1 day
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    STF21NM50N Power Mosfet Transistor N-CHANNEL SECOND GENERATION MDmesh MOSFET


    STP21NM50N-STF21NM50N-STW21NM50N

    STB21NM50N - STB21NM50N-1

    N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET


    General Features


    ■ 100% AVALANCHE TESTED

    ■ LOW INPUT CAPACITANCE AND GATE CHARGE

    ■ LOW GATE INPUT RESISTANCE


    DESCRIPTION

    The STx21NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters


    APPLICATIONS

    The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


    Absolute Maximum ratings

    SymbolParameterValueUnit
    TO-220 / D2PAK / I2PAK / TO-247TO-220FP
    VDSDrain-source Voltage (VGS = 0)500V
    VDGRDrain-gate Voltage (RGS = 20 kΩ)500V
    VGSGate- source Voltage±25V
    IDDrain Current (continuous) at TC = 25°C1818 (*)A
    IDDrain Current (continuous) at TC = 100°C1111 (*)A
    IDM (•)Drain Current (pulsed)7272 (*)A
    PTOTTotal Dissipation at TC = 25°C14030W
    Derating Factor1.120.23W/°C
    dv/dt(1)Peak Diode Recovery voltage slope15V/ns
    VisoInsulation Winthstand Voltage (DC)--2500V
    TstgStorage Temperature–55 to 150°C
    TjMax. Operating Junction Temperature150°C

    (•) Pulse width limited by safe operating area

    (*) Limited only by maximum temperature allowed

    (1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS


    Stock Offer (Hot Sell)

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    PT224865000PTC16+DIP-16
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    Q13FC135000040038000EPSON13+SMD
    QFET-3000-TR1G16165AVAGO16+SOT-343
    R1LP0408CSB-7LI3865RENESAS16+TSOP-32
    R2A15120FA5054RENESAS14+QFP48

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