IRLL110, SiHLL110
Power MOSFET
PRODUCT SUMMARY
| VDS (V) | 100 |
| RDS(on) (Ω) | VGS = 5.0 V | 0.54 |
| Qg (Max.) (nC) | 6.1 |
| Qgs (nC) | 2.6 |
| Qgd (nC) | 3.3 |
| Configuration | Single |
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effictiveness.
The SOT-223 package is designed for surface-mounting using vapor
phase, infrared, or wave soldering techniques. Its unique package
design allows for easy automatic pick-and-place as with other SOT
or SOIC packages but has the added advantage of improved thermal
performace due to an enlarged tab for heatsinking. Power
dissipation of greater than 1.25 W is possible in a typical surface
mount application.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
| PARAMETER | SYMBOL | LIMIT | UNIT |
|---|
| Drain-Source Voltage | VDS | 100 | V |
| Gate-Source Voltage | VGS | ± 10 | V |
| Continuous Drain Current | VGS at 5.0 V | TC = 25 °C | ID | 1.5 | A |
| TC = 100 °C | 0.93 |
| Pulsed Drain Currenta | IDM | 12 | A |
| Linear Derating Factor | | 0.025 | W/°C |
| Linear Derating Factor (PCB Mount)e | | 0.017 | W/°C |
| Single Pulse Avalanche Energyb | EAS | 50 | mJ |
| Repetitive Avalanche Currenta | IAR | 1.5 | A |
| Repetitive Avalanche Energya | EAR | 0.31 | mJ |
| Maximum Power Dissipation | TC = 25 °C | PD | 3.1 | W |
| Maximum Power Dissipation (PCB Mount)e | TA = 25 °C | 2.0 |
| Peak Diode Recovery dV/dtc | dV/dt | 5.5 | V/ns |
| Operating Junction and Storage Temperature Range | TJ, Tstg | - 55 to + 150 | °C |
| Soldering Recommendations (Peak Temperature) | for 10 s | | 300d | °C |
Notes
a. Repetitive rating; pulse width limited by maximum junction
temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 1.5
A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Stock Offer (Hot Sell)
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| A6259 | 2988 | SANKEN | 16+ | DIP |
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| PIC16F877-20I/L | 2990 | MICROCHIP | 13+ | PLCC44 |
| IRFBE30P | 2997 | IR | 15+ | TO-220 |
| MUR1640CT | 2998 | ON | 16+ | TO-220 |
| 1.5KE15A | 3000 | VISHAY | 16+ | DO-201AD |
| 1.5KE6.8CA | 3000 | VISHAY | 14+ | DO-201AD |
| 1N5359B | 3000 | ON | 14+ | DO-27 |
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| 2N7002W-7-F | 3000 | DIODES | 16+ | SOT-323 |
| 74HC1G04GW | 3000 | | 16+ | SOT-353 |
| BD136 | 3000 | ST | 13+ | TO-126 |
| BF620 | 3000 | | 15+ | SOT-89 |
| BZD27C13 | 3000 | VISHAY | 16+ | SOD123 |
