| Sign In | Join Free | My burrillandco.com |
|
| Ask Lasest Price | |
| Brand Name : | Ti |
| Model Number : | CSD17575Q3 |
| Price : | Contact us |
| Payment Terms : | Paypal, Western Union, TT |
| Supply Ability : | 50000 Pieces per Day |
| Delivery Time : | The goods will be shipped within 3 days once received fund |
CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET
1 Features
Low RDS(on)
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Optimized for Synchronous FET Applications
3 Description
This 1.9 mΩ, 30 V, SON 3×3 NexFETTM power MOSFET is designed to minimize losses in power conversion applications.
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
| VDS | Drain-to-Source Voltage | 30 | V | |
| Qg | Gate Charge Total (4.5V) | 23 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 5.4 | nC | |
| RDS(on) | Drain-to-Source On- Resistance | VGS = 4.5 V | 2.6 | mΩ |
| VGS =10V | 1.9 | |||
| Vth | Threshold Voltage | 1.4 | V | |
Ordering Information
Device | Media | Qty | Package | Ship |
CSD17575Q3 | 13-Inch Reel | 2500 | SON 3.3 × 3.3 mm Plastic Package | Tape and Reel |
CSD17575Q3T | 13-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
VDS | Drain-to-Source Voltage | 30 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limit) | 60 | A |
Continuous Drain Current (Silicon Limit), TC = 25°C | 182 | ||
Continuous Drain Current(1) | 27 | ||
IDM | Pulsed Drain Current(2) | 240 | A |
PD | Power Dissipation(1) | 2.8 | W |
Power Dissipation, TC = 25°C | 108 | ||
TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID =48,L=0.1mH,RG =25Ω | 115 | mJ |
|