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CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET

    Buy cheap CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET from wholesalers
     
    Buy cheap CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET from wholesalers
    • Buy cheap CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET from wholesalers

    CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET

    Ask Lasest Price
    Brand Name : Ti
    Model Number : CSD17575Q3
    Price : Contact us
    Payment Terms : Paypal, Western Union, TT
    Supply Ability : 50000 Pieces per Day
    Delivery Time : The goods will be shipped within 3 days once received fund
    • Product Details
    • Company Profile

    CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET

    CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET


    1 Features

    • Low Qg and Qgd
    • Low RDS(on)

    • Low Thermal Resistance

    • Avalanche Rated

    • Pb Free Terminal Plating

    • RoHS Compliant

    • Halogen Free

    • SON 3.3 mm × 3.3 mm Plastic Package


    2 Applications

    • Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems

    • Optimized for Synchronous FET Applications


    3 Description

    This 1.9 mΩ, 30 V, SON 3×3 NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

    Product Summary

    TA = 25°CTYPICAL VALUEUNIT
    VDSDrain-to-Source Voltage30V
    QgGate Charge Total (4.5V)23nC
    QgdGate Charge Gate-to-Drain5.4nC
    RDS(on)Drain-to-Source On- ResistanceVGS = 4.5 V2.6
    VGS =10V1.9
    VthThreshold Voltage1.4

    V


    Ordering Information

    Device

    Media

    Qty

    Package

    Ship

    CSD17575Q3

    13-Inch Reel

    2500

    SON 3.3 × 3.3 mm Plastic Package

    Tape and Reel

    CSD17575Q3T

    13-Inch Reel

    250


    Absolute Maximum Ratings

    TA = 25°C

    VALUE

    UNIT

    VDS

    Drain-to-Source Voltage

    30

    V

    VGS

    Gate-to-Source Voltage

    ±20

    V

    ID

    Continuous Drain Current (Package Limit)

    60

    A

    Continuous Drain Current (Silicon Limit), TC = 25°C

    182

    Continuous Drain Current(1)

    27

    IDM

    Pulsed Drain Current(2)

    240

    A

    PD

    Power Dissipation(1)

    2.8

    W

    Power Dissipation, TC = 25°C

    108

    TJ, Tstg

    Operating Junction and Storage Temperature Range

    –55 to 150

    °C

    EAS

    Avalanche Energy, single pulse ID =48,L=0.1mH,RG =25Ω

    115

    mJ

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