CSD18533Q5A Mosfet Power Transistor MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5

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Brand Name :	Ti
Model Number :	CSD18533Q5A
Price :	Contact us
Payment Terms :	Paypal, Western Union, TT
Supply Ability :	50000 Pieces per Day
Delivery Time :	The goods will be shipped within 3 days once received fund

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CSD18533Q5A Mosfet Power Transistor MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5

1 Features

2 Applications

3 Description

This 4.7 mΩ, 60 V, SON 5 × 6 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	60		V
Qg	Gate Charge Total (10 V)	29		nC
Qgd	Gate Charge Gate-to-Drain	5.4		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	6.5	mΩ
RDS(on)	Drain-to-Source On-Resistance	VGS =10V	4.7	mΩ
VGS(th)	Threshold Voltage	1.9		V

Ordering Information

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	60	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package limited), TC = 25°C	100	A
	Continuous Drain Current (Silicon limited), TC = 25°C	103
	Continuous Drain Current, TA = 25°C(1)	17
IDM	Pulsed Drain Current, TA = 25°C(2)	267	A
PD	Power Dissipation(1)	3.2	W
PD	Power Dissipation, TC = 25°C	116	W
TJ, Tstg	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, single pulse ID =53A,L=0.1mH,RG =25Ω	140	mJ

Product Tags:

mosfet motor control circuit

Company Info.

ChongMing Group (HK) Int'l Co., Ltd

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