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SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8

    Buy cheap SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8 from wholesalers
     
    Buy cheap SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8 from wholesalers
    • Buy cheap SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8 from wholesalers
    • Buy cheap SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8 from wholesalers

    SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8

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    Brand Name : Ti
    Model Number : SI7139DP-T1-GE3
    Price : Contact us
    Payment Terms : Paypal, Western Union, TT
    Supply Ability : 50000 Pieces per Day
    Delivery Time : The goods will be shipped within 3 days once received fund
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    SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8

    SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8


    FEATURES

    • TrenchFET® power MOSFETs
    • Material categorization:

    for definitions of compliance please see www.vishay.com/doc?99912

    PRODUCT SUMMARY

    VDS (V)

    RDS(on) ()

    ID (A)

    -60

    0.0145 at VGS = -10 V

    -14.4

    0.0190 at VGS = -4.5 V

    -12.6


    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

    PARAMETER

    SYMBOL

    10 s

    STEADY STATE

    UNIT

    Drain-Source Voltage

    VDS

    -60

    V

    Gate-Source Voltage

    VGS

    ± 20

    Continuous Drain Current (TJ = 150 °C) a

    TA =25°C

    ID

    -14.4

    -8.6

    A

    TA =70°C

    -11.5

    -6.9

    Pulsed Drain Current

    IDM

    -60

    Continuous Source Current (Diode Conduction) a

    IS

    -4.5

    -1.6

    Avalanche Current

    L = 0.1 mH

    IAS

    50

    Single Pulse Avalanche Energy

    EAS

    125

    mJ

    Maximum Power Dissipation a

    TA =25°C

    PD

    5.4

    1.9

    W

    TA =70°C

    3.4

    1.2

    Operating Junction and Storage Temperature Range

    TJ, Tstg

    -55 to +150

    °C

    Soldering Recommendations (Peak Temperature) b, c

    260


    THERMAL RESISTANCE RATINGS

    PARAMETER

    SYMBOL

    TYPICAL

    MAXIMUM

    UNIT

    Maximum Junction-to-Ambient a

    t  10 s

    RthJA

    18

    23

    °C/W

    Steady State

    52

    65

    Maximum Junction-to-Case (Drain)

    Steady State

    RthJC

    1

    1.3

    Quality SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8 for sale
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