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CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

    Buy cheap CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs from wholesalers
     
    Buy cheap CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs from wholesalers
    • Buy cheap CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs from wholesalers

    CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

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    Brand Name : Ti
    Model Number : CSD87312Q3E
    Price : Contact us
    Payment Terms : Paypal, Western Union, TT
    Supply Ability : 50000 Pieces per Day
    Delivery Time : The goods will be shipped within 3 days once received fund
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    CSD87312Q3E 2 Channel Mosfet Power Transistor Dual 30V N-CH NexFET Pwr MOSFETs

    CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs


    FEATURES

    • CommonSourceConn ection
    • Ultr a L o w Drain to Drain On-Resistance
    • Space Saving SON 3.3 x 3.3mm Plastic Package
    • Optimized for 5V Gate Drive
    • Low Thermal Resistance
    • Avalanche Rated
    • Pb Free Terminal Plating
    • RoHS Compliant
    • Halogen Free APPLICATIONS

    APPLICATIONS

    • Adaptor/USB Input Protection for Notebook
    • PCs and Tablets


    PRODUCT SUMMARY

    TA = 25°C

    TYPICAL VALUE

    UNIT

    VDS


    Drain to Source Voltage

    30

    V

    Qg

    Gate Charge Total (4.5V)

    6.3

    nC

    Qgd

    Gate Charge Gate to Drain

    0.7

    nC

    RDD(on)

    Drain to Drain On Resistance (Q1+Q2)

    VGS = 4.5V

    31

    VGS = 8V

    27

    VGS(th)

    Threshold Voltage

    1.0

    V


    ORDERING INFORMATION

    Device

    Package

    Media


    Qty

    Ship

    CSD87312Q3E

    SON 3.3 x 3.3mm Plastic Package

    13-In ch Reel

    2500

    Tape and Reel


    ABSOLUTE MAXIMUM RATINGS

    TA = 25°C

    VALUE

    UNIT

    VDS

    Drain to Source Voltage

    30

    V

    VGS

    Gate to Source Voltage

    +10/-8

    V

    ID

    (1) Continuous Drain Current, TC = 25°C

    27

    A

    IDM

    Pulsed Drain Current

    (2)

    45

    A

    PD

    Power Dissipation

    2.5

    W

    TJ, TSTG

    Operating Junction and Storage Temperature Range

    –55 to 150

    °C

    EAS

    Avalanche Energy, single pulse ID =24A,L=0.1mH,RG =25Ω

    29

    mJ


    DESCRIPTION

    The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.

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