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CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP

    Buy cheap CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP from wholesalers
     
    Buy cheap CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP from wholesalers
    • Buy cheap CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP from wholesalers

    CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP

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    Brand Name : Ti
    Model Number : CSD17578Q3A
    Price : Contact us
    Payment Terms : Paypal, Western Union, TT
    Supply Ability : 50000 Pieces per Day
    Delivery Time : The goods will be shipped within 3 days once received fund
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    CSD17578Q3A Mounting Style Mosfet Power Transistor 30 V 8-VSONP

    CSD17578Q3A Mosfet Power Transistor MOSFET CSD17578Q3A 30 V 8-VSONP


    1 Features

    • Low Qg and Qgd
    • Low RDS(on)

    • Low Thermal Resistance

    • Avalanche Rated

    • Pb-Free

    • RoHS Compliant

    • Halogen Free

    • SON 3.3 mm × 3.3 mm Plastic Package


    2 Applications

    • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems

    • Optimized for Control FET Applications


    3 Description

    This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.


    Product Summary

    TA = 25°CTYPICAL VALUEUNIT
    VDSDrain-to-Source Voltage30V
    QgGate Charge Total (4.5 V)7.9nC
    QgdGate Charge Gate to Drain1.7nC
    RDS(on)Drain-to-Source On-ResistanceVGS = 4.5 V8.2
    VGS =10V6.3
    VGS(th)Threshold Voltage1.5V


    Ordering Information

    DEVICE

    MEDIA

    QTY

    PACKAGE

    SHIP

    CSD17578Q3A

    13-Inch Reel

    2500

    SON 3.3 x 3.3 mm Plastic Package

    Tape and Reel

    CSD17578Q3AT

    7-Inch Reel

    250


    Absolute Maximum Ratings

    TA = 25°C

    VALUE

    UNIT

    VDS

    Drain-to-Source Voltage

    30

    V

    VGS

    Gate-to-Source Voltage

    ±20

    V

    ID

    Continuous Drain Current (Package limited)

    20

    A

    Continuous Drain Current (Silicon limited), TC = 25°C

    54

    Continuous Drain Current(1)

    14

    IDM

    Pulsed Drain Current(2)

    142

    A

    PD

    Power Dissipation(1)

    2.5

    W

    Power Dissipation, TC = 25°C

    37

    TJ, Tstg

    Operating Junction Temperature, Storage Temperature

    –55 to 150

    °C

    EAS

    Avalanche Energy, single pulse ID =22A,L=0.1mH,RG =25Ω

    24

    mJ

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