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TPS54620RGYR Power Path Management IC Switching Voltage Regulators 4.5-17Vin 6A Synch St Down SWIFT Cnvtr

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TPS54620RGYR Power Path Management IC Switching Voltage Regulators 4.5-17Vin 6A Synch St Down SWIFT Cnvtr

TPS54620RGYR Power Path Management IC Switching Voltage Regulators 4.5-17Vin 6A Synch St Down SWIFT Cnvtr


1 Features

  • Integrated 26 mΩ and 19 mΩ MOSFETs
  • Split Power Rail: 1.6 V to 17 V on PVIN

  • 200-kHz to 1.6-MHz Switching Frequency

  • Synchronizes to External Clock

  • 0.8 V ±1% Voltage Reference Overtemperature

  • Low 2-μA Shutdown Quiescent Current

  • Monotonic Start-Up into Prebiased Outputs

  • –40°C to 150°C Operating Junction Temperature Range

  • Adjustable Slow Start and Power Sequencing

  • Power Good Output Monitor for Undervoltage and Overvoltage

  • Adjustable Input Undervoltage Lockout

  • For SWIFTTM Documentation, Visit

    http://www.ti.com/swift

  • Create a Custom Design Using the TPS54620 With the WEBENCH Power Designer


2 Applications

  • High Density Distributed Power Systems

  • High Performance Point of Load Regulation

3 Description

The TPS54620 in thermally enhanced 3.50 mm × 3.50 mm QFN package is a full featured 17-V, 6-A, synchronous, step-down converter which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and by selecting a high switching frequency, reducing the footprint of the inductor.

The output voltage start-up ramp is controlled by the SS/TR pin which allows operation as either a stand- alone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open-drain power good pins.

Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit that turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal shutdown temperature.

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