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Unlocking Lithium Tantalate On Insulator ( LTOI ) For Advanced Photonic Applications

    Buy cheap Unlocking Lithium Tantalate On Insulator ( LTOI ) For Advanced Photonic Applications from wholesalers
     
    Buy cheap Unlocking Lithium Tantalate On Insulator ( LTOI ) For Advanced Photonic Applications from wholesalers
    • Buy cheap Unlocking Lithium Tantalate On Insulator ( LTOI ) For Advanced Photonic Applications from wholesalers

    Unlocking Lithium Tantalate On Insulator ( LTOI ) For Advanced Photonic Applications

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    Brand Name : BonTek
    Model Number : LNOI Wafer
    Certification : ISO:9001, ISO:14001
    Price : $2000/pc
    Payment Terms : T/T
    Supply Ability : 50000 pcs/Month
    Delivery Time : 1-4 weeks
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    Unlocking Lithium Tantalate On Insulator ( LTOI ) For Advanced Photonic Applications

    Unlocking the Potential of Lithium Tantalate on Insulator (LTOI) for Advanced Photonic Applications


    LTOI stands for Lithium Tantalate on Insulator, is a specialized substrate technology used in the field of integrated photonics. It involves the transfer of a thin layer of lithium tantalate (LiTaO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). LTOI substrates offer unique advantages for the development of compact and high-performance photonic devices.


    LTOI substrates are created through a bonding process where a thin layer of lithium tantalate crystal is transferred onto an insulating substrate. This process can be achieved through various techniques, including wafer bonding or ion-cutting, ensuring a strong bond between the layers.


    LTOI substrates offer unique advantages for advanced photonic applications. Their utilization in electro-optic modulators, waveguides, nonlinear optical devices, sensors, quantum photonics, and integrated photonic circuits demonstrates the broad range of applications and the potential for pushing the boundaries of integrated photonics technology.


    LTOI Wafer
    StructureLiTaO3 / SiO2 / SiLTV / PLTV< 1.5 μm ( 5 5 mm2 ) / 95%
    DiameterΦ100 ± 0.2 mmEdge Exclution5 mm
    Thickness500 ± 20 μmBowWithin 50 μm
    Primary Flat Length47.5 ± 2 mm
    57.5 ± 2 mm
    Edge Trimming2 ± 0.5 mm
    Wafer BevelingR TypeEnvironmentalRohs 2.0
    Top LT Layer
    Average Thickness400/600±10 nmUniformity< 40nm @17 Points
    Refraction indexno > 2.2800, ne < 2.2100 @ 633 nmOrientationZ axis ± 0.3°
    GradeOpticalSurface Ra< 0.5 nm
    Defects>1mm None;
    1 mm Within 300 total
    DelaminationNone
    Scratch>1cm None;
    1cm Within 3
    Primary FlatPerpendicular to +Y Axis ± 1°
    Isolation SiO2 Layer
    Average Thickness2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nmUniformity< ±1% @17 Points
    Fab. MethodThermal OxideRefraction index1.45-1.47 @ 633 nm
    Substrate
    MaterialSiOrientation<100> ± 1°
    Primary Flat Orientation<110> ± 1°Resistivity> 10 kΩ·cm
    Backside ContaminationNo visible stainBacksideEtch





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