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High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

    Buy cheap High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI from wholesalers
     
    Buy cheap High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI from wholesalers
    • Buy cheap High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI from wholesalers

    High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

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    Brand Name : BonTek
    Model Number : LNOI Wafer
    Certification : ISO:9001, ISO:14001
    Price : $2000/pc
    Payment Terms : T/T
    Supply Ability : 1000 pcs/Month
    Delivery Time : 1-4 weeks
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    High Speed Modulation And Wide Bandwidth Piezoelectric Wafer With LNOI POI

    Enabling High-Speed Modulation And Wide Bandwidth With LNOI POI


    Piezo on Insulation (POI) refers to a technology where piezoelectric materials are integrated onto an insulating substrate. This allows for the utilization of the piezoelectric effect while providing electrical isolation. The POI technology enables the development of various devices and systems that harness the unique properties of piezoelectric materials for sensing, actuation, and energy harvesting applications.


    POI (Piezo on Insulation) technology finds various applications in different fields due to its ability to combine the advantages of piezoelectric materials with electrical isolation. Such as sensors, Microelectromechanical Systems and Energy Storage and Generation.


    The versatility of integrating piezoelectric materials onto an insulating substrate opens up possibilities for innovative solutions in diverse fields, including electronics, energy, healthcare, and more.


    LNOI Wafer
    StructureLN / SiO2 / SiLTV / PLTV< 1.5 μm ( 5 5 mm2 ) / 95%
    DiameterΦ100 ± 0.2 mmEdge Exclution5 mm
    Thickness500 ± 20 μmBowWithin 50 μm
    Primary Flat Length47.5 ± 2 mm
    57.5 ± 2 mm
    Edge Trimming2 ± 0.5 mm
    Wafer BevelingR TypeEnvironmentalRohs 2.0
    Top LN Layer
    Average Thickness400/600±10 nmUniformity< 40nm @17 Points
    Refraction indexno > 2.2800, ne < 2.2100 @ 633 nmOrientationX axis ± 0.3°
    GradeOpticalSurface Ra< 0.5 nm
    Defects>1mm None;
    1 mm Within 300 total
    DelaminationNone
    Scratch>1cm None;
    1cm Within 3
    Primary FlatPerpendicular to +Y Axis ± 1°
    Isolation SiO2 Layer
    Average Thickness2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nmUniformity< ±1% @17 Points
    Fab. MethodThermal OxideRefraction index1.45-1.47 @ 633 nm
    Substrate
    MaterialSiOrientation<100> ± 1°
    Primary Flat Orientation<110> ± 1°Resistivity> 10 kΩ·cm
    Backside ContaminationNo visible stainBacksideEtch





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