2inch 3inch 4inch InAs Wafer Crystal Substrates N-Type For MBE
99.9999% Monocrystalline
Introduce of InAs substrate
Indium InAs or indium mono-arsenide is a semiconductor composed of
indium and arsenic. It has the appearance of a gray cubic crystal
with a melting point of 942°C. Indium arsenide is used to construct
infrared detectors with a wavelength range of 1-3.8um. The detector
is usually a photovoltaic photodiode. Cryogenic cooling detectors
have lower noise, but InAs detectors can also be used for
high-power applications at room temperature. Indium arsenide is
also used to make diode lasers. Indium arsenide is similar to
gallium arsenide and is a direct band gap material. Indium arsenide
is sometimes used with indium phosphide. Alloy with gallium
arsenide to form indium arsenic - a material whose band gap depends
on the In/Ga ratio. This method is mainly similar to alloying
indium nitride with gallium nitride to produce indium nitride.
Indium arsenide is known for its high electron mobility and narrow
band gap. It is widely used as a terahertz radiation source because
it is a powerful light-amber emitter.
Features of InAs wafer:
♦ With high electron mobility and mobility ratio (μe/μh=70), it is
an ideal material for Hall devices.
♦ MBE can be grown with GaAsSb, InAsPSb, and InAsSb multi-epitaxial
materials.
♦ Liquid sealing method (CZ), ensure the purity of the material can
reach 99.9999% (6N).
♦ All substrates are precisely polished and filled with a
protective atmosphere to meet the requirements of Epi-Ready.
♦Crystal direction selection: Another crystal direction is
available, e.g. (110).
♦ Optical measurement techniques, such as ellipsometry, ensure a
clean surface on each substrate.
| InAs Wafer Specifications |
| Diameter Slices | 2" | 3" |
| Orientation | (100) +/-0.1° | (100) +/- 0.1° |
| Diameter (mm) | 50.5 +/- 0.5 | 76.2 +/- 0.4 |
| Flat Option | EJ | EJ |
| Flat Tolerance | +/- 0.1° | +/- 0.1° |
| Major Flat Length (mm) | 16 +/- 2 | 22 +/- 2 |
| Minor Flat Length (mm) | 8 +/- 1 | 11 +/- 1 |
| Thickness (um) | 500 +/- 25 | 625 +/- 25 |
| Electrical and Dopant Specifications |
| Dopant | Type | Carrier Concentration cm-3 | Mobility cm^2•V^-1•s^-1 |
| Undoped | n-type | (1-3)*10^16 | >23000 |
| Low Sulphur | n-type | (4-8)*10^16 | 25000-15000 |
| High Sulphur | n-type | (1-3)*10^18 | 12000-7000 |
| Low Zinc | p-type | (1-3)*10^17 | 350-200 |
| High Zinc | p-type | (1-3)*10^18 | 250-100 |
| E.P.D. cm^-2 | 2" <= 15,000
3" <= 50,000 |
| Flatness Specifications |
| Wafer Form | 2" | 3" |
| Polish/Etched | TTV(um) | <12 | <15 |
| Bow(um) | <12 | <15 |
| Warp(um) | <12 | <15 |
| Polish/Polish | TTV(um) | <12 | <15 |
| Bow(um) | <12 | <15 |
| Warp(um) | <12 | <15 |
---FAQ –
Q: Are you a trading company or manufacturer?
A: zmkj is a trading company but has a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of
applications.
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A: Generally it is 5-10 days if the goods are in stock. or it is
15-20 days if the goods are not
in stock, it is according to quantity.
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A: Yes, we could offer the sample for free charge but do not pay
the cost of freight.
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A: Payment<= 1000 USD, 100% in advance. Payment>=1000USD,
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