PARALLEL Merrillchip Micron ISSI Samsung IC DRAM 4GBIT MT41K256M16TW-107 IT:P

Merrillchip Hot sale IC chips IC DRAM 4GBIT PARALLEL Integrated circuit Flash memory EEPROM DDR EMMC MT41K256M16TW-107 I

MT41K256M16TW-107 IT:P

DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an
8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.
A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock cycle data transfer
at the internal DRAM core and eight corresponding n-bit-wide, one half-clock-cycle data transfers at the I/O pins. The
differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input
receiver. DQS is center-aligned with data for WRITEs.

Manufacturer:	Micron Technology
Product Category:	DRAM
RoHS:	Details
Type:	SDRAM - DDR3L
Mounting Style:	SMD/SMT
Package / Case:	FBGA-96
Data Bus Width:	16 bit
Organization:	256 M x 16
Memory Size:	4 Gbit
Maximum Clock Frequency:	933 MHz
Access Time:	20 ns
Supply Voltage - Max:	1.45 V
Supply Voltage - Min:	1.283 V
Supply Current - Max:	46 mA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 95 C
Series:	MT41K
Packaging:	Tray
Brand:	Micron
Moisture Sensitive:	Yes
Product Type:	DRAM
Factory Pack Quantity:	1224
Subcategory:	Memory & Data Storage
Unit Weight:	0.128468 oz

                       Shenzhen QFY Technology Co., Ltd.

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