IKW50N60DTPXKSA1 IGBT Power Module – High Voltage High Power Capacity
IKW50N60DTPXKSA1 IGBT Power Module
Product Description:
The IKW50N60DTPXKSA1 IGBT Power Module is a high-performance,
low-loss, insulated-gate bipolar transistor that provides superior
performance in high-current switching applications. It features an
integrated protection circuit for over-current and over-temperature
conditions, and a low saturation voltage for improved efficiency.
The module also features a wide operating temperature range and a
high-frequency switching capability.
Features:
• Low-loss, insulated-gate bipolar transistor
• Integrated protection circuit for over-current and
over-temperature conditions
• Low saturation voltage for improved efficiency
• Wide operating temperature range
• High-frequency switching capability
• Maximum current rating: 50A
• Maximum breakdown voltage: 600V
• Maximum power dissipation: 140W
• Maximum junction temperature: 175°C
• Operating frequency range: 200kHz - 30MHz
Why buy from us >>> Fast / Safely / Conveniently
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.Our branches office include China, Hong Kong, Sigapore , Canada .
Offer business, service, resourcing and information for our global
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to our customers all over the world with speed and precision.
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Service >>>
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ensure that there is no quality problems.
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