NTK3139PT1G MOSFET Power Electronics
N-Channel SOT-723 Package Solution Efficient Reliable Device Operation
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
The NTK3139PT1G is a N-channel MOSFET manufactured by ON Semiconductor. It is housed in a SOT-723 package, with a transistor size of 1.4mm x 2.4mm. It is a depletion mode MOSFET, meaning it is normally conducting and needs to be switched off in order to block current flow.
This device has a drain source voltage (VDS) of 30V, a drain current (ID) of 3A and an on-resistance (RDS(on)) of 0.06 ohms. It is suitable for use in high voltage switching applications, such as motor control, DC-DC converters and LED lighting. The NTK3139PT1G features low gate charge (Qg), low input capacitance (Ciss), and fast switching speed. It has a maximum operating temperature of 150°C, and a maximum power dissipation (PD) of 4.2W. It is available in a RoHS compliant and lead-free package.
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