FM24CL64B-GTR IC Chip 64 Kbit Serial CMOS FRAM Memory with I2C
Interface
Product Description:
Functional Description
The FM24CL64B is a 64-Kbit nonvolatile memory employing an advanced
ferroelectric process. A ferroelectric random access memory or
F-RAM is nonvolatile and performs reads and writes similar to a
RAM. It provides reliable data retention for 151 years while
eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24CL64B performs write operations at bus
speed. No write delays are incurred. Data is written to the memory
array immediately after each byte is successfully transferred to
the device. The next bus cycle can commence without the need for
data polling. In addition, the product offers substantial write
endurance compared with other nonvolatile memories. Also, F-RAM
exhibits much lower power during writes than EEPROM since write
operations do not require an internally elevated power supply
voltage for write circuits.
The FM24CL64B is capable of supporting 1014 read/write cycles, or
100 million times more write cycles than EEPROM. These capabilities
make the FM24CL64B ideal for nonvolatile memory applications,
requiring frequent or rapid writes. Examples range from data
logging, where the number of write cycles may be critical, to
demanding industrial controls where the long write time of EEPROM
can cause data loss. The combination of features allows more
frequent data writing with less overhead for the system. The
FM24CL64B provides substantial benefits to users of serial (I2C)
EEPROM as a hardware drop-in replacement. The device specifications
are guaranteed over an industrial temperature range of –40 C to
+85 C.
Supply Voltage: 3.3V,Clock Frequency: 1MHz,Terminal Position:
DUAL,Number of Pins: 8Pins,Memory Format: FRAM
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