NTHL190N65S3HF MOSFET Power
Electronics TO-247-3 Transistor for High Current Switching Applications
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | |
NTHL190N65S3HF is a power MOSFET in a TO-247-3 package, developed by ON Semiconductor. It features an optimized cell design for low RDS(on) and a high avalanche energy rating. The device is suitable for use in high frequency switching applications and other power management applications.
This N-channel, enhancement-mode MOSFET has a drain-source breakdown voltage of 650 V, a maximum drain current of 19 A, and a maximum drain-source on-state resistance of 0.0190 Ω. It also offers a maximum drain-source voltage of 250 V and a maximum gate-source voltage of 18 V. This device has an operating temperature range of -55°C to 150°C.
The NTHL190N65S3HF is a robust and reliable device. It has a high peak current capability, fast switching speed, high avalanche energy rating, and low gate charge. The device also has a maximum junction temperature of 175°C and a maximum storage temperature of -55°C to 150°C. Additionally, it is RoHS compliant and has UL, TUV, and VDE certifications.
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