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IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3

    Buy cheap IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3 from wholesalers
     
    Buy cheap IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3 from wholesalers
    • Buy cheap IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3 from wholesalers

    IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3

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    Brand Name : Infineon Technologies
    Model Number : IPP65R110CFDA
    Certification : RoHS
    Price : Negotiable
    Payment Terms : L/C, D/A, D/P, T/T
    Supply Ability : 6K PCS
    Delivery Time : 2-3 DAYS
    • Product Details
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    IPP65R110CFDA High Power N Channel Mosfet Logic Level N 650V 31.2A Tc 277.8W PG-TO220-3

    IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3


    Features:IPP65R110CFDA

    CategorySingle FETs, MOSFETs
    MfrInfineon Technologies
    SeriesAutomotive, AEC-Q101, CoolMOS
    Product StatusActive
    FET TypeN-Channel
    TechnologyMOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)650 V
    Current - Continuous Drain (Id) @ 25ツーC31.2A (Tc)
    Drive Voltage (Max Rds On, Min Rds On)10V
    Rds On (Max) @ Id, Vgs110mOhm @ 12.7A, 10V
    Vgs(th) (Max) @ Id4.5V @ 1.3mA
    Gate Charge (Qg) (Max) @ Vgs118 nC @ 10 V
    Vgs (Max)±20V
    Input Capacitance (Ciss) (Max) @ Vds3240 pF @ 100 V
    Power Dissipation (Max)277.8W (Tc)
    Operating Temperature-40°C~ 150°C (TJ)
    Mounting TypeThrough Hole
    Supplier Device PackagePG-TO220-3
    Package / CaseTO-220-3
    Base Product NumberIPP65R110

    Additional Resources

    ATTRIBUTEDESCRIPTION
    Other NamesIPP65R110CFDAAKSA1-ND
    448-IPP65R110CFDAAKSA1
    SP000895234
    Standard Package50

    Data Picture:https://www.infineon.com/dgdl/Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5












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