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Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V

    Buy cheap Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V from wholesalers
     
    Buy cheap Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V from wholesalers
    • Buy cheap Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V from wholesalers
    • Buy cheap Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V from wholesalers

    Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V

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    Model Number : IRFR9214PBF
    Price : Negotiable
    Payment Terms : L/C, T/T
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    Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V

    Aviation Parts IRFR9214PBF MOSFET P-Chan Drain-Source Breakdown Voltage 250 V


    Descriptions of Aviation Parts:

    Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.

    Features of Aviation Parts:

    • Advanced process technology
    • Fully avalanche rated
    • Surface-mount (IRFR9214, SiHFR9214)
    • Straight lead (IRFU9214, SiHFU9214)
    • P-channel
    • Fast switching


    Specifications of Aviation Parts:

    Product AttributeAttribute Value
    Manufacturer:Vishay
    Product Category:MOSFET
    RoHS:Details
    Technology:Si
    Mounting Style:SMD/SMT
    Package / Case:TO-252-3
    Transistor Polarity:P-Channel
    Number of Channels:1 Channel
    Vds - Drain-Source Breakdown Voltage:250 V
    Id - Continuous Drain Current:2.7 A
    Rds On - Drain-Source Resistance:3 Ohms
    Vgs - Gate-Source Voltage:- 20 V, + 20 V
    Vgs th - Gate-Source Threshold Voltage:4 V
    Qg - Gate Charge:14 nC
    Minimum Operating Temperature:- 55 C
    Maximum Operating Temperature:+ 150 C
    Pd - Power Dissipation:50 W
    Channel Mode:Enhancement
    Series:IRFR/U
    Packaging:Tube
    Brand:Vishay Semiconductors
    Configuration:Single
    Height:2.38 mm
    Length:6.73 mm
    Product Type:MOSFET
    Factory Pack Quantity:3000
    Subcategory:MOSFETs
    Width:6.22 mm
    Unit Weight:0.011640 oz















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