IKW15N120T2 IGBT Power Transistor

IKW15N120T2 IGBT Transistors LOW LOSS DuoPack 1200V 15A Hard Switching Anti Parallel Diode

Description

Features

Lowest VCEsat drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery anti-parallel Emitter Controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution

Applications

Motor control and drives
Solutions for photovoltaic energy systems
Uninterruptible Power Supplies (UPS)

• Specifications

• Product Attribute	Attribute Value
  Product Category:	IGBT Transistors
  Technology:	Si
  Package / Case:	TO-247-3
  Mounting Style:	Through Hole
  Configuration:	Single
  Collector- Emitter Voltage VCEO Max:	1.2 kV
  Collector-Emitter Saturation Voltage:	1.7 V
  Maximum Gate Emitter Voltage:	- 20 V, + 20 V
  Continuous Collector Current at 25 C:	30 A
  Pd - Power Dissipation:	235 W
  Minimum Operating Temperature:	- 40 C
  Maximum Operating Temperature:	+ 175 C
  Series:	Trenchstop IGBT3
  Packaging:	Tube
  Brand:	Infineon Technologies
  Continuous Collector Current Ic Max:	30 A
  Gate-Emitter Leakage Current:	600 nA
  Height:	20.9 mm
  Length:	15.9 mm
  Product Type:	IGBT Transistors

  Shopping Guide

Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics, display modules, intelligent electronics, new energy, the Internet of things, 5G productsand other fields，With high-quality products, reasonable prices, rapid distributionand timely service, we can provide customers with the most cost-effective products and save customers a lot of time.