Mitsubishi IGBT Power Module M57962AL-01R-02 Hybrid IC For Driving

Mitsubishi Igbt Modules M57962AL-01R-02 Hybrid IC For Driving IGBT Modules
Description:
M57962AL is a hybrid integrated circuit designed for driving n-channel IGBT modules in any gate-amplifier

application. This device operates as an isolation amplifier for these modules and provides the required

electrical isolation between the input and output with an opto-coupler.Recommended IGBT modules:

VcES = 600V series up to 600A class

VCES = 1200V series up to 400A class

Applications

To drive IGBT modules for inverter or AC servo systems application​
Specifications
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DY-12H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (TC = 25°C) IC 200 Amperes
Peak Collector Current ICM 400* Amperes
Emitter Current** (TC = 25°C) IE 200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj £ 150°C) Pc 780 Watts
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Features

Trading Guides

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