MT41K256M16HA-125:E Memory Integrated Circuit SDRAM DDR3L 4Gbit

MT41K256M16HA-125:E Memory IC SDRAM DDR3L 4Gbit Parallel 800 MHz 13.75 ns FBGA96

Specifications

Description

DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM (Die Rev :E) data sheet specifications when running in 1.5V compatible mode.

Features

• VDD = VDDQ = 1.35V (1.283–1.45V)

• Backward compatible to VDD = VDDQ = 1.5V ±0.075V

– Supports DDR3L devices to be backward compatible in 1.5V applications

• Differential bidirectional data strobe • 8n-bit prefetch architecture

• Differential clock inputs (CK, CK#) • 8 internal banks

• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL)

• Programmable posted CAS additive latency (AL)

• Programmable CAS (WRITE) latency (CWL)

• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

• Selectable BC4 or BL8 on-the-fly (OTF)

• Self refresh mode

• TC of 105°C

– 64ms, 8192-cycle refresh up to 85°C

– 32ms, 8192-cycle refresh at >85°C to 95°C

– 16ms, 8192-cycle refresh at >95°C to 105°C

• Self refresh temperature (SRT)

• Automatic self refresh (ASR)

• Write leveling

• Multipurpose register

• Output driver calibration

Trading Guides

Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics, display modules, intelligent electronics, new energy, the Internet of things, 5G productsand other fields，With high-quality products, reasonable prices, rapid distributionand timely service, we can provide customers with the most cost-effective products and save customers a lot of time.