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M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

    Buy cheap M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW from wholesalers
     
    Buy cheap M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW from wholesalers
    • Buy cheap M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW from wholesalers

    M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : M28S
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    M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW

    TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP)


    FEATURE

    Ÿ High DC Current Gain and Large Current Capability


    MARKING

    M28S=Device code

    Solid dot=Green molding compound device,

    if none,the normal device

    Z=Rank of hFE, XXX=Code



    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    M28STO-92Bulk1000pcs/Bag
    M28S-TATO-92Tape2000pcs/Box



    MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

    SymbolPara meterValueUnit
    VCBOCollector-Base Voltage40V
    VCEOCollector-Emitter Voltage20V
    VEBOEmitter-Base Voltage6V
    ICCollector Current -Continuous1A
    PDCollector Power Dissipation625mW
    R0 JAThermal Resist ance f rom Junction to Ambient200Š / W
    TjJunction Temperature150Š
    TstgStorage Temperature-55 ~+150Š


    ELECTRICAL CHARACTERISTICS

    Ta=25 Š unless otherwise specified



    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC= 0.1mA ,IE=040V
    Collector-emitter breakdown voltageV(BR) CEOIC=1mA,IB=020V
    Emitter-base breakdown voltageV(BR)EBOIE=0.1mA,IC=06V
    Collector cut-off currentICBOVCB=40V,IE=01µA
    Collector cut-off currentICEOVCE=20V,IB=05µA
    Emitter cut-off currentIEBOVEB=5V,IC=00.1µA

    DC current gain

    hFE(1)VCE=1V, IC=1mA290
    hFE(2)VCE=1V, IC=100mA3001000
    hFE(3)VCE=10V, IC=300mA300
    hFE(4)VCE=1V, IC=500mA300
    Collector-emitter saturation voltageVCE(sat)IC=600mA,IB=20mA0.55V
    Transition frequencyfTVCE=10V,IE=50mA ,f=30MHz100MHz


    CLASSIFICATION OF hFE(2)

    RANKBCD
    RANGE300-550500-700650-1000

    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015



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