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3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

    Buy cheap 3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V from wholesalers
     
    Buy cheap 3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V from wholesalers
    • Buy cheap 3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V from wholesalers

    3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : 3DD13001B
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    3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

    TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)


    FEATURE

    Ÿ power switching applications


    MARKING

    13001=Device code

    S 6B=Code



    ORDERING INFORMATION

    Part NumberPackagePacking MethodPack Quantity
    3DD13001BTO-92Bulk1000pcs/Bag
    3DD13001B-TATO-92Tape2000pcs/Box



    MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)


    SymbolParameterValueUnit
    VCBOCollector -Base Voltage600V
    VCEOCollector-Emitter Voltage420V
    VEBOEmitter-Base Voltage7V
    ICCollector Current -Continuous0.2A
    PCCollector Power Dissipation0.75W
    TJJunction Temperature150
    TstgStorage Temperature-55 ~150


    ELECTRICAL CHARACTERISTICS

    Ta=25 Š unless otherwise specified


    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC= 100μA , IE=0600V
    Collector-emitter breakdown voltageV(BR)CEOIC= 1mA , IB=0400V
    Emitter-base breakdown voltageV(BR)EBOIE= 100μA, IC=07V
    Collector cut-off currentICBOVCB= 600V , IE=0100μA
    Collector cut-off currentICEOVCE= 400V, IB=0200μA
    Emitter cut-off currentIEBOVEB=7V, IC=0100μA

    DC current gain

    hFE(1)VCE= 20V, IC= 20mA1429
    hFE(2)VCE= 10V, IC= 0.25 mA5
    Collector-emitter saturation voltageVCE(sat)IC= 50mA, IB= 10 mA0.5V
    Base-emitter saturation voltageVBE(sat)IC= 50 mA, IB= 10mA1.2V
    Transition frequencyfT

    VCE= 20V, IC=20mA

    f = 1MHz

    8MHz
    Fall timetf

    IC=50mA, IB1=-IB2=5mA, VCC=45V

    0.3μs
    Storage timetS1.5μs


    CLASSIFICATION OF hFE(2)

    Range14-1717-2020-2323-2626-29

    TO-92 Package Outline Dimensions


    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    Φ1.6000.063
    h0.0000.3800.0000.015



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