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2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

    Buy cheap 2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply from wholesalers
     
    Buy cheap 2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply from wholesalers
    • Buy cheap 2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply from wholesalers
    • Buy cheap 2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply from wholesalers

    2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

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    Brand Name : Hua Xuan Yang
    Certification : RoHS、SGS
    Price : Negotiated
    Delivery Time : 1 - 2 Weeks
    Payment Terms : L/C T/T Western Union
    Supply Ability : 18,000,000PCS / Per Day
    Model Number : 2N3906
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    2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

    SOT-89-3L Plastic-Encapsulate Transistors 2N3906 ​TRANSISTOR (NPN).


    FEATURE

    Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications

    Ÿ As complementary type, the NPN transistor 2N3904 is Recommended

    Ÿ This transistor is also available in the SOT-23 case with the type designation MMBT3906



    MAXIMUM RATINGS(Ta=25ć unless otherwise noted)


    SymbolParameterValueUnit
    VCBOCollector-Base Voltage-40V
    VCEOCollector-Emitter Voltage-40V
    VEBOEmitter-Base Voltage-5V
    ICCollector Current-Continuous-0.2A
    PCCollector Power Dissipation0.625W
    TJJunction Temperature150ć
    TstgStorage Temperature-55~150ć

    Ta=25 Š unless otherwise specified

    ParameterSymbolTest conditionsMinTypMaxUnit
    Collector-base breakdown voltageV(BR)CBOIC = -10µA, IE=0-40V
    Collector-emitter breakdown voltageV(BR)CEOIC =-1mA , IB=0-40V
    Emitter-base breakdown voltageV(BR)EBOIE= -10µA, IC=0-5V
    Collector cut-off currentICBOVCB= -40 V,IE=0-0.1µA
    Collector cut-off currentICEXVCE= -30 V,VEB(off)=-3V-50nA
    Emitter cut-off currentIEBOVEB= -5 V , IC=0-0.1µA

    DC current gain

    hFE1VCE=-1 V, IC= -10mA100400
    hFE2VCE=-1 V, IC= -50mA60
    hFE3VCE=-2 V, IC= -100mA30
    Collector-emitter saturation voltageVCE(sat)IC= -50mA, IB= -5mA-0.4V
    Base-emitter saturation voltageVBE(sat)IC= -50mA, IB= -5mA-0.95V
    Transition frequencyfT

    VCE=-20V, IC= -10mA

    f = 100MHz

    250MHz
    Delay Timetd

    VCC=-3V,VBE=-0.5V,

    IC=-10mA,IB1=-1mA

    35ns
    Rise Timetr35ns
    Storage Timets

    VCC=-3V,Ic=-10mA

    IB1=IB2=-1mA

    225ns
    Fall Timetf75ns


    Typical Characteristics




    Package Outline Dimensions

    SymbolDimensions In MillimetersDimensions In Inches
    MinMaxMinMax
    A3.3003.7000.1300.146
    A11.1001.4000.0430.055
    b0.3800.5500.0150.022
    c0.3600.5100.0140.020
    D4.3004.7000.1690.185
    D13.4300.135
    E4.3004.7000.1690.185
    e1.270 TYP0.050 TYP
    e12.4402.6400.0960.104
    L14.10014.5000.5550.571
    01.6000.063
    h0.0000.3800.0000.015





    SOT-89-3L Suggested Pad Layout


    TO-92 Suggested Pad Layout



    TO-92 7DSH DQG 5HHO


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